2SK1104 Todos los transistores

 ..1. Size:28K  panasonic
 2sk1104.pdf

Silicon Junction FETs (Small Signal) 2SK1104 2SK1104 Silicon N-Channel Junction Unit mm For switching 4.0 0.2 Complementary with 2SJ164 Features Low ON-resistance Low-noise characteristics marking 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 1.27 1.27 1 Source Gate-Drain voltage VGDS 65 V 2.54 0.15 2 Gate Drain current ID 20 mA 3

 8.1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

 8.2. Size:85K  nec
 2sk1108.pdf

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1108 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK1108 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance 1000 S TYP. (IDSS = 100 A) 1600 S TYP. (IDSS = 200 A) Includes diode and high resistance at G - S ORDERING INFORM

 8.3. Size:44K  nec
 2sk1109.pdf

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING (Unit mm) The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES Compact package 1. Source High forward transfer admittance 2. Drain 3. Gate 1000 S TYP. (IDSS = 100 A) 1 2 1600 S TYP. (IDSS = 200

 8.4. Size:29K  panasonic
 2sk1103.pdf

Silicon Junction FETs (Small Signal) 2SK1103 2SK1103 Silicon N-Channel Junction Unit mm For switching +0.2 2.8 0.3 Complementary with 2SJ163 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features 1 Low ON-resistance Low-noise characteristics 3 2 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Rating Unit 0.1 to 0.3 Gate-Drain voltage VGDS 65 V 0.4 0.2 Drain c

 8.5. Size:10K  utc
 2sk1109.pdf

UTC K1109 JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 1 2 DESCRIPTION The UTC K1109 is N-channel JFET for electret condenser microphone. 3 FEATURES *High gm implies low transfer loss *Built-in gate-source diode and resistor implies fast TOP VIEW power on settling time SOT-23 1 SOURCE 2 DRAIN 3 GATE ABSOLUTE MAXIMUM RATINGS ( Operating tem

 8.6. Size:162K  fuji
 2sk1101-01mr.pdf

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 8.7. Size:169K  fuji
 2sk1102-01mr.pdf

 8.8. Size:168K  fuji
 2sk1105-r.pdf

 8.9. Size:977K  kexin
 2sk1109.pdf

SMD Type MOSFET N-Channel Junction Field Effect Transistors 2SK1109 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 20V ID = 10m A 1 2 High forward transfer admittance +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9-0.1 1000 s TYP. (IDSS = 100 A) 1600 s TYP. (IDSS = 200 A) Includes diode and high resistance at G - S 1. Drain 2. So

 8.10. Size:234K  inchange semiconductor
 2sk1105.pdf

isc N-Channel MOSFET Transistor 2SK1105 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulators, UPS,DC-DC converters , general purpose power amplifier applications . ABSOLUTE MAXIMUM RATIN