2SK1104 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1104
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 65 V
|Id|ⓘ - Corriente continua de drenaje: 0.02 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 1.3 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 250 Ohm
Paquete / Cubierta: NEW-S-TYPE
Búsqueda de reemplazo de MOSFET 2SK1104
2SK1104 Datasheet (PDF)
2sk1104.pdf
Silicon Junction FETs (Small Signal) 2SK11042SK1104Silicon N-Channel JunctionUnit : mmFor switching4.0 0.2Complementary with 2SJ164 FeaturesLow ON-resistanceLow-noise characteristicsmarking1 2 3 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit1.27 1.271 : SourceGate-Drain voltage VGDS 65 V 2.54 0.152 : GateDrain current ID 20 mA3
2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf
2sk1108.pdf
DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1108N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTION The 2SK1108 is suitable for converter of ECM.FEATURES Compact package High forward transfer admittance1000 S TYP. (IDSS = 100 A)1600 S TYP. (IDSS = 200 A) Includes diode and high resistance at G - SORDERING INFORM
2sk1109.pdf
DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK1109N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTIONPACKAGE DRAWING (Unit: mm) The 2SK1109 is suitable for converter of ECM.0.8FEATURES Compact package1. Source High forward transfer admittance2. Drain3. Gate1000 S TYP. (IDSS = 100 A)1 21600 S TYP. (IDSS = 200
2sk1103.pdf
Silicon Junction FETs (Small Signal) 2SK11032SK1103Silicon N-Channel JunctionUnit : mmFor switching+0.22.8 0.3Complementary with 2SJ163 +0.250.65 0.15 1.5 0.05 0.65 0.15 Features1Low ON-resistanceLow-noise characteristics32 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol Rating Unit0.1 to 0.3Gate-Drain voltage VGDS 65 V0.4 0.2Drain c
2sk1109.pdf
UTC K1109 JUNCTION FIELD EFFECT TRANSISTORN-CHANNEL JFET FORELECTRET CONDENSERMICROPHONE1 2DESCRIPTION The UTC K1109 is N-channel JFET for electretcondenser microphone.3FEATURES*High gm implies low transfer loss*Built-in gate-source diode and resistor implies fastTOP VIEW power on settling timeSOT-23 1:SOURCE 2:DRAIN 3:GATEABSOLUTE MAXIMUM RATINGS ( Operating tem
2sk1109.pdf
SMD Type MOSFETN-Channel Junction Field Effect Transistors2SK1109SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 20V ID = 10m A1 2 High forward transfer admittance+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9-0.11000 s TYP. (IDSS = 100 A)1600 s TYP. (IDSS = 200 A) Includes diode and high resistance at G - S1. Drain2. So
2sk1105.pdf
isc N-Channel MOSFET Transistor 2SK1105DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators, UPS,DC-DC converters ,general purpose power amplifier applications .ABSOLUTE MAXIMUM RATIN
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Liste
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