HUF76409P3 Todos los transistores

 

HUF76409P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HUF76409P3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 49 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO220AB
     - Selección de transistores por parámetros

 

HUF76409P3 Datasheet (PDF)

 ..1. Size:111K  intersil
huf76409p3.pdf pdf_icon

HUF76409P3

HUF76409P3Data Sheet November 1999 File Number 4666.117A, 60V, 0.070 Ohm, N-Channel, LogicLevel UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.062, VGS = 10VSOURCE- rDS(ON) = 0.070, VGS = 5VDRAINGATE Simulation Models- Temperature Compensated PSPICE and SABERElectrical Models- Spice and SABER Thermal Im

 6.1. Size:211K  fairchild semi
huf76409d3-s.pdf pdf_icon

HUF76409P3

HUF76409D3, HUF76409D3SData Sheet December 200117A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance- rDS(ON) = 0.063, VGS = 10VDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.071, VGS = 5VDRAINGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER

 7.1. Size:149K  fairchild semi
huf76407d3st.pdf pdf_icon

HUF76409P3

HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and

 7.2. Size:266K  fairchild semi
huf76407dk8.pdf pdf_icon

HUF76409P3

HUF76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedanc

Otros transistores... HUF76145P3 , HUF76145S3S , HUF76407D3 , HUF76407D3S , HUF76407DK8 , HUF76407P3 , HUF76409D3 , HUF76409D3S , IRFP260 , HUF76413D3 , HUF76413D3S , HUF76413P3 , HUF76419D3 , HUF76419D3S , HUF76419P3 , HUF76419S3S , HUF76423D3 .

History: R6515ENZ | IRFI4019H-117P | AP6N3R5LI | SSM3K301T | QS8J12 | RCX080N25 | WMP15N65C4

 

 
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