HUF76409P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HUF76409P3
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 49 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET HUF76409P3

HUF76409P3 Datasheet (PDF)

..1. Size:111K intersil
huf76409p3.pdf

HUF76409P3Data Sheet November 1999 File Number 4666.117A, 60V, 0.070 Ohm, N-Channel, LogicLevel UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.062, VGS = 10VSOURCE- rDS(ON) = 0.070, VGS = 5VDRAINGATE Simulation Models- Temperature Compensated PSPICE and SABERElectrical Models- Spice and SABER Thermal Im

6.1. Size:211K fairchild semi
huf76409d3-s.pdf

HUF76409D3, HUF76409D3SData Sheet December 200117A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AA Features Ultra Low On-Resistance- rDS(ON) = 0.063, VGS = 10VDRAINDRAINSOURCE (FLANGE) (FLANGE)- rDS(ON) = 0.071, VGS = 5VDRAINGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER

7.1. Size:149K fairchild semi
huf76407d3st.pdf

HUF76407D3, HUF76407D3SData Sheet December 200111A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeaturesDRAIN DRAINSOURCE Ultra Low On-Resistance (FLANGE) (FLANGE)DRAINGATE- rDS(ON) = 0.092, VGS = 10V- rDS(ON) = 0.107, VGS = 5VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and

7.2. Size:266K fairchild semi
huf76407dk8.pdf

HUF76407DK8Data Sheet December 20013.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC MS-012AA Ultra Low On-ResistanceBRANDING DASH- rDS(ON) = 0.090, VGS = 10V- rDS(ON) = 0.105, VGS = 5V Simulation Models5- Temperature Compensated PSPICE and SABER Electrical Models12- SPICE and SABER Thermal Impedanc

7.3. Size:214K fairchild semi
huf76407p3.pdf

HUF76407P3Data Sheet December 200112A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220ABFeatures Ultra Low On-ResistanceSOURCEDRAIN - rDS(ON) = 0.092, VGS = 10VGATE- rDS(ON) = 0.107, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and SABER Thermal Impedance Mo

7.4. Size:542K fairchild semi
huf76407dk f085.pdf

HUFA76407DK8T_F085Data Sheet October 20103.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFETFeaturesPackagingJEDEC MS-012AA Ultra Low On-Resistance- rDS(ON) = 0.090, VGS = 10VBRANDING DASH- rDS(ON) = 0.105, VGS = 5V Simulation Models- Temperature Compensated PSPICE and SABER 5Electrical Models- SPICE and SABER Thermal Impedance

7.5. Size:234K fairchild semi
huf76407d3 huf76407d3s.pdf

7.6. Size:792K onsemi
huf76407d3s.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Otros transistores... HUF76145P3 , HUF76145S3S , HUF76407D3 , HUF76407D3S , HUF76407DK8 , HUF76407P3 , HUF76409D3 , HUF76409D3S , AON7408 , HUF76413D3 , HUF76413D3S , HUF76413P3 , HUF76419D3 , HUF76419D3S , HUF76419P3 , HUF76419S3S , HUF76423D3 .

Liste

Recientemente añadidas las descripciónes de los transistores: