2SK3121 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3121
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua
de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 25 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: PCP
Búsqueda de reemplazo de 2SK3121 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3121 datasheet
..1. Size:125K sanyo
2sk3121.pdf 
Ordering number ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SK3121] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C
8.1. Size:184K 1
2sk3124.pdf
Power F-MOS FETs 2SK3124 Silicon N-Channel Power F-MOS FET Features unit mm Avalanche energy capacity guaranteed 6.5 0.1 2.3 0.1 5.3 0.1 High-speed switching 4.35 0.1 0.5 0.1 No secondary breakdown High electrostatic breakdown voltage Applications 1.0 0.1 0.1 0.05 High-speed switching (switching power supply) 0.5 0.1 0.75 0.1 For high-frequency power amplif
8.3. Size:160K toshiba
2sk3127.pdf
2SK3127 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOS VI) 2SK3127 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 9.5 (typ.) High forward transfer admittance Yfs = 38 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement-mode Vth = 1.5 to 3.0 V
8.4. Size:136K toshiba
2sk3129.pdf
2SK3129 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3129 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 5.5 m (typ.) High forward transfer admittance Yfs = 70 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 0.8 to 2.0 V
8.5. Size:152K toshiba
2sk3128.pdf
2SK3128 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3128 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 9.5 m (typ.) High forward transfer admittance Yfs = 40 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 3.0 V (VDS =
8.6. Size:151K toshiba
2sk3126.pdf
2SK3126 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3126 Switching Regulator Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.48 (typ.) High forward transfer admittance Yfs = 7.5 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 450 V) Enhancement mode Vth = 2.4 3.4 V (VDS = 10 V, ID = 1 mA) Absolute Max
8.7. Size:205K toshiba
2sk3125.pdf
2SK3125 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3125 DC-DC Converter, Relay Drive and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 5.3 m (typ.) High forward transfer admittance Yfs = 60 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement model Vth = 1.5 3.0 V (VDS =
8.8. Size:120K sanyo
2sk3122.pdf
Ordering number ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3122] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C
8.9. Size:136K sanyo
2sk3120.pdf
Ordering number ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A 4V drive. [2SK3120] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25 C
8.10. Size:286K inchange semiconductor
2sk3129.pdf
isc N-Channel MOSFET Transistor 2SK3129 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 50V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri
8.11. Size:286K inchange semiconductor
2sk3128.pdf
isc N-Channel MOSFET Transistor 2SK3128 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr
8.12. Size:356K inchange semiconductor
2sk3127b.pdf
isc N-Channel MOSFET Transistor 2SK3127B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.13. Size:285K inchange semiconductor
2sk3124.pdf
isc N-Channel MOSFET Transistor 2SK3124 FEATURES Drain Current I = 0.5A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 23 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.14. Size:282K inchange semiconductor
2sk3127k.pdf
isc N-Channel MOSFET Transistor 2SK3127K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.15. Size:279K inchange semiconductor
2sk3126.pdf
isc N-Channel MOSFET Transistor 2SK3126 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V =450V(Min) DSS Static Drain-Source On-Resistance R = 0.65 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.16. Size:299K inchange semiconductor
2sk312.pdf
isc N-Channel MOSFET Transistor 2SK312 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Otros transistores... 2SK1267
, 2SJ146
, 2SK3020
, 2SK3021
, 2SK3065
, 2SK3092
, 2SK3119
, 2SK3120
, K2611
, 2SK3122
, 2SK3278
, 2SK3291
, 2SK3292
, 2SK3293
, 2SK3335
, 2SK3411
, 2SK3412
.
History: SWF13N65D
| 4N70KL-TND-R
