2SK3449 Todos los transistores

 ..1. Size:28K  sanyo
 2sk3449.pdf

Ordering number ENN6672 2SK3449 N-Channel Silicon MOSFET 2SK3449 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2190 4V drive. [2SK3449] 8.0 4.0 3.3 1.0 1.0 3.0 1.6 0.8 0.8 0.75 0.7 1 Source 1 2 3 2 Drain 3 Gate Specifications 2.4 4.8 SANYO TO-126ML Absolute Maximum Ratings at Ta=

 8.1. Size:188K  toshiba
 2sk3445.pdf

2SK3445 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3445 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 90 m (typ.) High forward transfer admittance Yfs = 10 S (typ.) Low leakage current IDSS = 100 A (VDS = 250 V) Enhancement mode Vth = 3.0 to 5

 8.2. Size:187K  toshiba
 2sk3440.pdf

2SK3440 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3440 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 6.5 m (typ.) High forward transfer admittance Yfs = 30 S (typ.) Low leakage current IDSS = 100 A (VDS = 60 V) Enhancement mode Vth = 2.0 to 4

 8.3. Size:169K  toshiba
 2sk3443.pdf

2SK3443 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3443 Switching Regulator, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 50 m (typ.) High forward transfer admittance Yfs = 9 S (typ.) Low leakage current IDSS = 100 A (VDS = 150 V) Enhancementmode Vth = 3.0 to 5.0 V (V

 8.4. Size:167K  toshiba
 2sk3442.pdf

2SK3442 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3442 Switching Regulator, DC-DC Converter and Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 15 m (typ.) High forward transfer admittance Yfs = 28 S (typ.) Low leakage current IDSS = 100 A (VDS = 100 V) Enhancement mode Vth = 2.0 4.0 V (VD

 8.5. Size:189K  toshiba
 2sk3441.pdf

2SK3441 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3441 DC-DC Converter Applications Unit mm Relay Drive and Motor Drive Applications Low drain-source ON resistance RDS (ON) = 4.5 m (typ.) High forward transfer admittance Yfs = 80 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode Vth = 1.3 to

 8.6. Size:222K  toshiba
 2sk3444.pdf

2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3444 Switching Regulator, DC-DC Converter Applications Unit mm Motor Drive Applications Low drain-source ON resistance RDS (ON) = 65 m (typ.) High forward transfer admittance Y = 10 S (typ.) fs Low leakage current I = 100 A (V = 200 V) DSS DS Enhancement-mode Vth = 3.

 8.7. Size:27K  sanyo
 2sk3448.pdf

Ordering number ENN6785 2SK3448 N-Channel Silicon MOSFET 2SK3448 Ultrahigh-Speed Switching Use Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2087A 4V drive. [2SK3448] Meets radial taping. 2.5 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 Specifications SANYO NMP Absolute Maximum Ratin

 8.8. Size:93K  renesas
 rej03g1101 2sk3447ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.9. Size:82K  renesas
 2sk3446.pdf

2SK3446 Silicon N Channel Power MOS FET Power Switching REJ03G1100-0800 (Previous ADE-208-1566F) Rev.8.00 Sep 07, 2005 Features Capable of 2.5 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 typ. (at VGS = 4 V) Outline RENESAS Package code PRSS0003DC-A (Package name TO-92MOD) D 1. Source G 2. Drain 3. Gate 3 2 1 S Rev.8.00

 8.10. Size:80K  renesas
 2sk3447.pdf

2SK3447 Silicon N Channel Power MOS FET Power Switching REJ03G1101-0700 (Previous ADE-208-1567E) Rev.7.00 Sep 07, 2005 Features Capable of 4 V gate drive Low drive current Low on-resistance RDS (on) = 1.5 typ. (at VGS = 10 V) Outline RENESAS Package code PRSS0003DC-A (Package name TO-92MOD) D 1. Source G 2. Drain 3. Gate 3 2 1 S Rev.7.00 S

 8.11. Size:95K  renesas
 rej03g1100 2sk3446ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.