2SK1406 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Power F-MOS FETs 2SK14062SK1406Silicon N-Channel Power F-MOSUnit : mm FeaturesLow ON-resistance RDS(on) : RDS(on)= 0.32(typ)15.0 0.3 5.0 0.2High-speed switching : tf =140ns(typ)11.0 0.2 3.2No secondary breakdown3.2 0.1High breakdown voltage, large allowable power dissipation Applications2.0 0.22.0 0.1 Non-contact relaySolenoid drive 1.1 0.1 0.6

2SK1400, 2SK1400A Silicon N Channel MOS FET REJ03G0940-0200 (Previous: ADE-208-1280) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name:

2SK1405 Silicon N Channel MOS FET REJ03G0945-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast diode (trr = 140 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A(Package name: TO-3PFM)D

2SK1402, 2SK1402A Silicon N Channel MOS FET REJ03G0942-0200 (Previous: ADE-208-1282) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A(Package name:

2SK1404 Silicon N Channel MOS FET REJ03G0944-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0003AD-A(Package name: TO-220FM)DG1. Gate2. Drain3

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK1403, 2SK1403ASilicon N-Channel MOS FETApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-3PD1G231. Gate2. Drain(Flange)S3. Source2SK1403, 2SK1403AAbsolute Maximum Ratings (Ta = 25C)Item Symb

2SK1401, 2SK1401ASilicon N-Channel MOS FETADE-208-1281 (Z)1st. EditionMar. 2001ApplicationHigh speed power switchingFeatures Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converterOutlineTO-3PD1G231. Gate2. Drain(Flange)S3. Source2SK1401, 2SK1401AAbsol

isc N-Channel MOSFET Transistor 2SK1409DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen

isc N-Channel MOSFET Transistor 2SK1403DESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

isc N-Channel MOSFET Transistor 2SK1402ADESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

isc N-Channel MOSFET Transistor 2SK1403ADESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and DC-DC converterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volta

isc N-Channel MOSFET Transistor 2SK1402DESCRIPTIONDrain Current I = 4A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dra

isc N-Channel MOSFET Transistor 2SK1401ADESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 350V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

isc N-Channel MOSFET Transistor 2SK1408DESCRIPTIONDrain Current I =16A@ T =25D CDrain Source Voltage-: V =450 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK1401DESCRIPTIONDrain Current I = 15A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain