2SK1406 Todos los transistores

 ..1. Size:33K  panasonic
 2sk1406.pdf

Power F-MOS FETs 2SK1406 2SK1406 Silicon N-Channel Power F-MOS Unit mm Features Low ON-resistance RDS(on) RDS(on)= 0.32 (typ) 15.0 0.3 5.0 0.2 High-speed switching tf =140ns(typ) 11.0 0.2 3.2 No secondary breakdown 3.2 0.1 High breakdown voltage, large allowable power dissipation Applications 2.0 0.2 2.0 0.1 Non-contact relay Solenoid drive 1.1 0.1 0.6

 8.1. Size:83K  renesas
 2sk1400.pdf

2SK1400, 2SK1400A Silicon N Channel MOS FET REJ03G0940-0200 (Previous ADE-208-1280) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name

 8.2. Size:93K  renesas
 2sk1405.pdf

2SK1405 Silicon N Channel MOS FET REJ03G0945-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current Built-in fast diode (trr = 140 ns) Suitable for motor control, switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D

 8.3. Size:82K  renesas
 2sk1402.pdf

2SK1402, 2SK1402A Silicon N Channel MOS FET REJ03G0942-0200 (Previous ADE-208-1282) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name

 8.4. Size:81K  renesas
 2sk1404.pdf

2SK1404 Silicon N Channel MOS FET REJ03G0944-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3

 8.5. Size:98K  renesas
 rej03g0943 2sk1403ads.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:95K  renesas
 rej03g0944 2sk1404ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:40K  hitachi
 2sk1403-a.pdf

2SK1403, 2SK1403A Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1403, 2SK1403A Absolute Maximum Ratings (Ta = 25 C) Item Symb

 8.8. Size:49K  hitachi
 2sk1401 2sk1401a.pdf

2SK1401, 2SK1401A Silicon N-Channel MOS FET ADE-208-1281 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D 1 G 2 3 1. Gate 2. Drain (Flange) S 3. Source 2SK1401, 2SK1401A Absol

 8.9. Size:201K  inchange semiconductor
 2sk1409.pdf

isc N-Channel MOSFET Transistor 2SK1409 DESCRIPTION Drain Current I =20A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solen

 8.10. Size:203K  inchange semiconductor
 2sk1403.pdf

isc N-Channel MOSFET Transistor 2SK1403 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and DC-DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag

 8.11. Size:199K  inchange semiconductor
 2sk1402a.pdf

isc N-Channel MOSFET Transistor 2SK1402A DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

 8.12. Size:203K  inchange semiconductor
 2sk1403a.pdf

isc N-Channel MOSFET Transistor 2SK1403A DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and DC-DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volta

 8.13. Size:199K  inchange semiconductor
 2sk1402.pdf

isc N-Channel MOSFET Transistor 2SK1402 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage- V = 600V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra

 8.14. Size:203K  inchange semiconductor
 2sk1401a.pdf

isc N-Channel MOSFET Transistor 2SK1401A DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0)

 8.15. Size:202K  inchange semiconductor
 2sk1408.pdf

isc N-Channel MOSFET Transistor 2SK1408 DESCRIPTION Drain Current I =16A@ T =25 D C Drain Source Voltage- V =450 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solen

 8.16. Size:207K  inchange semiconductor
 2sk1401.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1401 DESCRIPTION Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 300V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain