2SK1416 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1416
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 43 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: TO220AB SC46

Búsqueda de reemplazo de MOSFET 2SK1416

2SK1416 Datasheet (PDF)

..1. Size:98K sanyo
2sk1416.pdf

Ordering number:EN3554N-Channel Silicon MOSFET2SK1416Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C Converters.[2SK1416]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Rating

8.1. Size:30K sanyo
2sk1412ls.pdf

Ordering number : ENN4228B2SK1412LSN-Channel Silicon MOSFET2SK1412LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance, low input capacitance. unit : mm Ultrahigh-speed switching. 2078C High reliability (Adoption of HVP process).[2SK1412LS] Micaless package facilitating mounting.10.0 4.53.22.80.91.2 1.20.75 0.71 2 3

8.2. Size:109K sanyo
2sk1414.pdf

Ordering number:EN4230N-Channel Silicon MOSFET2SK1414Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance, low input capacitance,unit:mmUltrahigh-speed switching.2077A High reliability (Adoption of HVP process).[2SK1414]20.03.35.02.03.40.61.21 : Gate1 2 32 : Drain3 : Source5.45 5.45SANYO : TO-3PBLSpecifications

8.3. Size:103K sanyo
2sk1418.pdf

Ordering number:EN3556N-Channel Silicon MOSFET2SK1418Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C Converters.[2SK1418]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Rating

8.4. Size:101K sanyo
2sk1417.pdf

Ordering number:EN3555N-Channel Silicon MOSFET2SK1417Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-state resistance.unit:mm Ultrahigh-speed switching.2052C Converters.[2SK1417]10.24.53.65.11.31.21 : Gate0.80.42 : Drain1 2 33 : SourceEIAJ : SC-462.55 2.55SANYO : TO-220ABSpecificationsAbsolute Maximum Rating

8.5. Size:111K sanyo
2sk1413.pdf

Ordering number:EN4229N-Channel Silicon MOSFET2SK1413Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance, low input capacitance,unit:mmUltrahigh-speed switching.2076B High reliability (Adoption of HVP process).[2SK1413] Micaless package facilitating mounting.16.05.63.43.12.82.0 2.01.00.61 : Gate1 2 32 : Drain

8.6. Size:109K sanyo
2sk1419.pdf

Ordering number:EN3557AN-Channel Silicon MOSFET2SK1419Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Converters.[2SK1419] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Sourse2.55 2.55SANYO : TO-220

8.7. Size:109K sanyo
2sk1412.pdf

Ordering number:EN4228N-Channel Silicon MOSFET2SK1412Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance, low input capacitance,unit:mmUltrahigh-speed switching.2078B High reliability (Adoption of HVP process).[2SK1412] Micaless package facilitating mounting.4.510.02.83.20.91.21.20.70.751 : Gate1 2 32 : Drain

8.8. Size:202K inchange semiconductor
2sk1410.pdf

isc N-Channel MOSFET Transistor 2SK1410DESCRIPTIONDrain Current I =16A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aUNISYMBOL ARAMETER VALUETV Drain-Source Voltage (V =

8.9. Size:201K inchange semiconductor
2sk1411.pdf

isc N-Channel MOSFET Transistor 2SK1411DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =500 (Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor controls,relay and solen

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