2SK1416 Todos los transistores

 

2SK1416 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1416

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 43 nS

Conductancia de drenaje-sustrato (Cd): 350 pF

Resistencia drenaje-fuente RDS(on): 0.08 Ohm

Empaquetado / Estuche: TO220AB_SC46

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2SK1416 Datasheet (PDF)

1.1. 2sk1416.pdf Size:98K _sanyo

2SK1416
2SK1416

Ordering number:EN3554 N-Channel Silicon MOSFET 2SK1416 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C Converters. [2SK1416] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at T

4.1. 2sk1412.pdf Size:109K _sanyo

2SK1416
2SK1416

Ordering number:EN4228 N-Channel Silicon MOSFET 2SK1412 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance, low input capacitance, unit:mm Ultrahigh-speed switching. 2078B High reliability (Adoption of HVP process). [2SK1412] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 0.9 1.2 1.2 0.7 0.75 1 : Gate 1 2 3 2 : Drain 3 :

4.2. 2sk1414.pdf Size:109K _sanyo

2SK1416
2SK1416

Ordering number:EN4230 N-Channel Silicon MOSFET 2SK1414 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance, low input capacitance, unit:mm Ultrahigh-speed switching. 2077A High reliability (Adoption of HVP process). [2SK1414] 20.0 3.3 5.0 2.0 3.4 0.6 1.2 1 : Gate 1 2 3 2 : Drain 3 : Source 5.45 5.45 SANYO : TO-3PBL Specifications Abs

 4.3. 2sk1413.pdf Size:111K _sanyo

2SK1416
2SK1416

Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance, low input capacitance, unit:mm Ultrahigh-speed switching. 2076B High reliability (Adoption of HVP process). [2SK1413] Micaless package facilitating mounting. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 : Gate 1 2 3 2 : Drain 3 : So

4.4. 2sk1417.pdf Size:101K _sanyo

2SK1416
2SK1416

Ordering number:EN3555 N-Channel Silicon MOSFET 2SK1417 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C Converters. [2SK1417] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at T

 4.5. 2sk1412ls.pdf Size:30K _sanyo

2SK1416
2SK1416

Ordering number : ENN4228B 2SK1412LS N-Channel Silicon MOSFET 2SK1412LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance, low input capacitance. unit : mm Ultrahigh-speed switching. 2078C High reliability (Adoption of HVP process). [2SK1412LS] Micaless package facilitating mounting. 10.0 4.5 3.2 2.8 0.9 1.2 1.2 0.75 0.7 1 2 3 1 : Gate

4.6. 2sk1419.pdf Size:109K _sanyo

2SK1416
2SK1416

Ordering number:EN3557A N-Channel Silicon MOSFET 2SK1419 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Converters. [2SK1419] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Sourse 2.55 2.55 SANYO : TO-220ML Spe

4.7. 2sk1418.pdf Size:103K _sanyo

2SK1416
2SK1416

Ordering number:EN3556 N-Channel Silicon MOSFET 2SK1418 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-state resistance. unit:mm Ultrahigh-speed switching. 2052C Converters. [2SK1418] 10.2 4.5 3.6 5.1 1.3 1.2 1 : Gate 0.8 0.4 2 : Drain 1 2 3 3 : Source EIAJ : SC-46 2.55 2.55 SANYO : TO-220AB Specifications Absolute Maximum Ratings at T

4.8. 2sk1410.pdf Size:61K _inchange_semiconductor

2SK1416
2SK1416

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1410 DESCRIPTION ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) UNI SYMBOL VALUE ARAMETER T VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Vol

4.9. 2sk1411.pdf Size:61K _inchange_semiconductor

2SK1416
2SK1416

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1411 DESCRIPTION ·Drain Current –ID=20A@ TC=25℃ ·Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RA

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