2SK2046 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2046
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 550 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: TP

Búsqueda de reemplazo de MOSFET 2SK2046

2SK2046 Datasheet (PDF)

..1. Size:88K sanyo
2sk2046.pdf

Ordering number:ENN4630N-Channel Silicon MOSFET2SK2046Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SK2046]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SK2046]6.5 2.35.0 0.540.5

8.1. Size:398K 1
2sk2040 2sk2040-z.pdf

8.2. Size:100K sanyo
2sk2044.pdf

8.3. Size:33K sanyo
2sk2044ls.pdf

Ordering number : ENN4286B2SK2044LSN-Channel Silicon MOSFET2SK2044LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2078C High-speed diode (trr=120ns).[2SK2044LS] Micaless package facilitating mounting.10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpe

8.4. Size:33K sanyo
2sk2045ls.pdf

Ordering number : ENN4287B2SK2045LSN-Channel Silicon MOSFET2SK2045LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2078C High-speed diode (trr=140ns).[2SK2045LS] Micaless package facilitating mounting.10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpe

8.5. Size:109K sanyo
2sk2043.pdf

Ordering number:ENN4285AN-Channel Silicon MOSFET2SK2043Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2078B High-speed diode built in (trr=100ns).[2SK2043] Micaless package facilitating easy mounting.4.510.02.83.20.91.21.20.70.751 : Gate1 2 32 : Drain3 : Source2.5

8.6. Size:98K sanyo
2sk2045.pdf

8.7. Size:29K panasonic
2sk2047.pdf

Power F-MOS FETs 2SK20472SK2047Silicon N-Channel Power F-MOSUnit : mm Features7.0 0.3 3.5 0.2Avalanche energy capability guaranteed : EAS > 3.6mJ3.0 0.2VGSS=30V guaranteedHigh-speed switching : tf= 30nsNo secondary breakdown1.1 0.1 0.85 0.1 Applications 0.75 0.1 0.4 0.1Non-contact relaySolenoid drive2.3 0.2Motor drive4.6 0.4Control equipme

8.8. Size:217K fuji
2sk2049.pdf

N-channel MOS-FET2SK2049F-III Series 60V 0,025 50A 80W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Forward Transconductance> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converterswww.DataSheet4U.com> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum

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