2SK2122 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2122
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO220E

Búsqueda de reemplazo de MOSFET 2SK2122

2SK2122 Datasheet (PDF)

..1. Size:34K panasonic
2sk2122.pdf

Power F-MOS FETs 2SK21222SK2122Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 3.2mJ4.6 0.29.9 0.3 2.9 0.2High-speed switching : tf= 50ns3.2 0.1No secondary breakdown Applications2.6 0.1Non-contact relay1.2 0.151.45 0.15 0.7 0.1Solenoid drive0.75 0.1Motor drive2.54 0.2Control equipment5

8.1. Size:156K sanyo
2sk212.pdf

Ordering number:EN661EN-Channel Junction Silicon FET2SK212FM Tuner ApplicationsFeatures Package Dimensions Ideal for FM tuners in low-voltage radios, car radios,unit:mmetc.2040A Small-sized package permitting 2SK212-applied sets[2SK212]to be made small and slim.2.24.0 Small Crss (Crss=0.04pF typ). High yfs ( yfs =6.0mS typ).0.40.50.4

8.2. Size:33K panasonic
2sk2128.pdf

Power F-MOS FETs 2SK21282SK2128Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS >15mJ4.6 0.29.9 0.3 2.9 0.2VGSS=20V guaranteed3.2 0.1High-speed switching : tf= 35nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive

8.3. Size:34K panasonic
2sk2123.pdf

Power F-MOS FETs 2SK21232SK2123Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 100mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 35nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv

8.4. Size:33K panasonic
2sk2126.pdf

Power F-MOS FETs 2SK21262SK2126Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 100mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 40nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv

8.5. Size:31K panasonic
2sk2127.pdf

Power F-MOS FETs 2SK21272SK2127Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 130mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 60nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv

8.6. Size:32K panasonic
2sk2129.pdf

Power F-MOS FETs 2SK21292SK2129Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 20mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 50nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive

8.7. Size:31K panasonic
2sk2124.pdf

Power F-MOS FETs 2SK21242SK2124Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 130mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 60nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor driv

8.8. Size:34K panasonic
2sk2125.pdf

Power F-MOS FETs 2SK21252SK2125Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed : EAS > 15.6mJ4.6 0.29.9 0.3 2.9 0.2VGSS=30V guaranteed3.2 0.1High-speed switching : tf= 35nsNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor dri

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History: TMAN23N50

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