2SK2218 Todos los transistores

 ..1. Size:213K  sanyo
 2sk2218.pdf

Ordering number ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm Amateur radio equipment. 2125 UHF amplifiers, MIX, OSC, analog switches. [2SK2218] Large yfs . 4.5 Small Ciss. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Source 2 Gate 0.75 3 Dra

 8.1. Size:134K  sanyo
 2sk2219.pdf

Ordering number ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Features Package Dimensions Ultrasmall-sized package permitting 2SK2219- unit mm applied sets to be made small and slim. 2058A Especially suited for use in audio, telephone capaci- [2SK2219] tor microphones. Excellent voltage characteristic. 0.3 0.15 Excellent transien

 8.2. Size:23K  panasonic
 2sk2211.pdf

Silicon MOS FETs (Small Signal) 2SK2211 2SK2211 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4 0.08 0.4 0.04 0.5 0.08 magazine packing are available. 1.5 0.1 3.0 0.15 3 2 1 Absolute Maximum Ratings (Ta

 8.3. Size:33K  panasonic
 2sk2210.pdf

Power F-MOS FETs 2SK2210 2SK2210 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm

 8.4. Size:843K  kexin
 2sk2211.pdf

SMD Type MOSFET N-Channel MOSFET 2SK2211 1.70 0.1 Features VDS (V) = 30V ID = 1A 0.42 0.1 RDS(ON) 0.75 (VGS = 4V) 0.46 0.1 RDS(ON) 0.6 (VGS = 10V) D G 1.Gate 2.Drain 3.Source S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1 A