HUF76423D3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

HUF76423D3, HUF76423D3SData Sheet December 200120A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchildPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.032, VGS = 10VDRAIN DRAIN- rDS(ON) = 0.037, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER

HUF76423P3, HUF76423S3SData Sheet December 200133A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesDRAIN Ultra Low On-ResistanceSOURCE (FLANGE)DRAIN- rDS(ON) = 0.030, VGS = 10VGATE- rDS(ON) = 0.035, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEElec

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

HUFA76429D3ST_F085 Data Sheet September 201020A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETsPackagingFeatures Ultra Low On-ResistanceJEDEC TO-252AA- rDS(ON) = 0.023, VGS = 10V- rDS(ON) = 0.027, VGS = 5VDRAIN (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER Electriecal ModelsGATE- Spice and SABER Thermal Im

HUF76429D3, HUF76429D3SData Sheet February 200520A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

HUF76429P3, HUF76429S3SData Sheet December 200144A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE- rDS(ON) = 0.022, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.025, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

HUF76429D3, HUF76429D3SData Sheet February 200520A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.023, VGS = 10VSOURCE (FLANGE)DRAIN- rDS(ON) = 0.027, VGS = 5VGATE Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect

HUF76429P3, HUF76429S3SData Sheet December 200144A, 60V, 0.025 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE- rDS(ON) = 0.022, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.025, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElect