2SK2836 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2836
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 2.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 12 nS
Cossⓘ - Capacitancia de salida: 55 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 9 Ohm
Encapsulados: 2-7H1B
Búsqueda de reemplazo de 2SK2836 MOSFET
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2SK2836 datasheet
..1. Size:420K toshiba
2sk2836.pdf 
2SK2836 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2836 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 6.4 (typ.) (ON) High forward transfer admittance Y = 0.85 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DSS Enhancement-mode Vth = 2.0 4.0
8.3. Size:77K 1
2sk2834-01.pdf 
FUJI POWER MOSFET 2SK2834-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=
8.4. Size:399K toshiba
2sk2835.pdf 
2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2835 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.56 (typ.) (ON) High forward transfer admittance Y = 4.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 200 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V
8.5. Size:426K toshiba
2sk2837.pdf 
2SK2837 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2837 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.21 (typ.) (ON) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DSS Enhancement-mode Vth = 2.0 4.0 V
8.6. Size:133K toshiba
2sk2839.pdf 
2SK2839 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2839 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm 4 V gatedrive Low drain-source ON resistance R = 30 m (typ.) DS (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 30 V) DS Enhancement-mode
8.7. Size:413K toshiba
2sk2838.pdf 
2SK2838 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2838 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS (ON) = 0.84 (typ.) High forward transfer admittance Y = 4.4 S (typ.) fs Low leakage current I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V
8.8. Size:279K inchange semiconductor
2sk2830.pdf 
isc N-Channel MOSFET Transistor 2SK2830 FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.9. Size:356K inchange semiconductor
2sk2838b.pdf 
isc N-Channel MOSFET Transistor 2SK2838B FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.10. Size:331K inchange semiconductor
2sk2834w.pdf 
isc N-Channel MOSFET Transistor 2SK2834W FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.11. Size:289K inchange semiconductor
2sk2832.pdf 
isc N-Channel MOSFET Transistor 2SK2832 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.12. Size:282K inchange semiconductor
2sk2838k.pdf 
isc N-Channel MOSFET Transistor 2SK2838K FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max)@V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.13. Size:273K inchange semiconductor
2sk2833.pdf 
isc N-Channel MOSFET Transistor 2SK2833 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 120V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.14. Size:287K inchange semiconductor
2sk2834n.pdf 
isc N-Channel MOSFET Transistor 2SK2834N FEATURES Drain Current I = 9.0A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
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History: SM3023NSV
| SM6019NSF
| APQ08SN50BH
| APQ07SN80BF