2SK2909 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:ENN6312N-Channel Silicon MOSFET2SK2909Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A 2.5V drive.[2SK2909]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol

2SK2908-01L,SFUJI POWER MOSFET200509N-CHANNEL SILICON POWER MOSFETFAP-IIS SERIESOutline DrawingsFeaturesHigh speed switching T-pack(L) T-pack(S)Low on-resistanceNo secondary breakdownLow driving powerAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25

FUJI POWER MOS-FET2SK2900-01N-CHANNEL SILICON POWER MOS-FETTO-220AB FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unles

FUJI POWER MOS-FET2SK2906-01N-CHANNEL SILICON POWER MOS-FET FeaturesTO-3PHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. SourceEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless ot

FUJI POWER MOS-FET2SK2907-01RN-CHANNEL SILICON POWER MOS-FETTO-3PF Features5.5 0.3 0.3 0.215.5High speed switching 3.23.2+0.3 Low on-resistanceNo secondary breadownLow driving power Avalanche-proof 0.32.1 0.3 1.6+0.2 1.10.1 0.2 3.5Applications 0.2 0.25.45 5.45 0.6+0.2 Switching regulators1. Gate UPS (Uninterruptible Powe

FUJI POWER MOS-FET2SK2901-01L,SN-CHANNEL SILICON POWER MOS-FET FeaturesT-Pack(L) T-Pack(S)High speed switching Low on-resistance10+0.5 0.24.5No secondary breadown 1.32Low driving power Avalanche-proof+0.2 0.21.2 0.10.80.4+0.2Applications2.75.08 Switching regulators1. Gate2, 4. Drain UPS (Uninterruptible Power Supply)3. Source DC-DC conv

FUJI POWER MOS-FET2SK2902-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications2.54 Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25

FUJI POWER MOS-FET2SK2903-01MRN-CHANNEL SILICON POWER MOS-FETTO-220F15 FeaturesHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications2.54 Switching regulators UPS (Uninterruptible Power Supply)3. Source DC-DC convertersEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25

FUJI POWER MOS-FET2SK2904-01N-CHANNEL SILICON POWER MOS-FET FeaturesTO-3PHigh speed switching Low on-resistanceNo secondary breadownLow driving power Avalanche-proofApplications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. SourceEquivalent circuit schematicMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unless ot

FUJI POWER MOS-FET2SK2905-01RN-CHANNEL SILICON POWER MOS-FET FeaturesTO-3PF5.5 0.3 0.3High speed switching 0.215.53.23.2+0.3 Low on-resistanceNo secondary breadownLow driving power Avalanche-proof 0.32.1 0.3 1.6+0.2 1.10.1 0.2Applications 3.5 0.2 0.25.45 5.45 0.6+0.2 Switching regulators1. Gate UPS (Uninterruptible Pow

isc N-Channel MOSFET Transistor 2SK2900-01FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK2906-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK2908-01SFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK2901-01SFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK2907-01FEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.8m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK2902-01MRFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive

isc N-Channel MOSFET Transistor 2SK2903-01MRFEATURESDrain Current : I = 50A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK2908-01LFEATURESDrain Current : I = 9.0A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK2901-01LFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 14.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

isc N-Channel MOSFET Transistor 2SK2904-01FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

isc N-Channel MOSFET Transistor 2SK2905-01RFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 12m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.