2SK2919 Datasheet. Equivalente

 ..1. Size:106K  sanyo
 2sk2919.pdf

Ordering number ENN6121 N-Channel Silicon MOSFET 2SK2919 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2128 On-chip high-speed diode (trr=100ns). [2SK2919] 8.2 7.8 6.2 0.6 3 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 6.0 1 Gate 2 Source 3 Drain SANYO ZP Specifications Abs

 8.1. Size:234K  1
 2sk2918-01.pdf

 8.2. Size:434K  toshiba
 2sk2915.pdf

2SK2915 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2915 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.31 (typ.) (ON) High forward transfer admittance Y = 15 S (typ.) fs Low leakage current I = 100 A (max) (V = 600 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V

 8.3. Size:413K  toshiba
 2sk2916.pdf

2SK2916 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( MOSV) 2SK2916 DC-DC Converter, Relay Drive and Motor Drive Applications Unit mm Low drain source ON resistance RDS = 0.35 (typ.) (ON) High forward transfer admittance Y = 11 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement mode Vth = 2.0 4.0 V

 8.4. Size:422K  toshiba
 2sk2917.pdf

2SK2917 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2917 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain source ON resistance RDS = 0.21 (typ.) (ON) High forward transfer admittance Y = 17 S (typ.) fs Low leakage current I = 100 A (max) (V = 500 V) DSS DS Enhancement mode Vth = 2.0 4.

 8.5. Size:396K  toshiba
 2sk2914.pdf

2SK2914 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2914 Chopper Regulator, DC-DC Converter and Moter Drive Applications Unit mm Low drain-source ON resistance RDS = 0.42 (typ.) (ON) High forward transfer admittance Y = 7.5 S (typ.) fs Low leakage current I = 100 A (max) (V = 250 V) DSS DS Enhancement-mode Vth = 1.5 3.5 V

 8.6. Size:229K  sanyo
 2sk2911.pdf

Ordering number ENN6313 N-Channel Silicon MOSFET 2SK2911 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2091A 2.5V drive. [2SK2911] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol C

 8.7. Size:150K  sanyo
 2sk2910.pdf

Ordering number ENN6153A N-Channel Silicon MOSFET 2SK2910 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2091A 4V drive. [2SK2910] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol C

 8.8. Size:95K  renesas
 2sk2912.pdf

2SK2912(L), 2SK2912(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1038-0200 (Previous ADE-208-495A) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AE-A RENESAS Package code PRSS0004AE-B (Package name LDPAK(L

 8.9. Size:109K  renesas
 rej03g1038 2sk2912lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.10. Size:286K  inchange semiconductor
 2sk2915.pdf

isc N-Channel MOSFET Transistor 2SK2915 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

 8.11. Size:286K  inchange semiconductor
 2sk2916.pdf

isc N-Channel MOSFET Transistor 2SK2916 FEATURES Drain Current I = 14A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

 8.12. Size:281K  inchange semiconductor
 2sk2912l.pdf

isc N-Channel MOSFET Transistor 2SK2912L FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

 8.13. Size:286K  inchange semiconductor
 2sk2918-01.pdf

isc N-Channel MOSFET Transistor 2SK2918-01 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 130m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 8.14. Size:355K  inchange semiconductor
 2sk2912s.pdf

isc N-Channel MOSFET Transistor 2SK2912S FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

 8.15. Size:209K  inchange semiconductor
 2sk2917.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2917 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 8.16. Size:288K  inchange semiconductor
 2sk2914.pdf

isc N-Channel MOSFET Transistor 2SK2914 FEATURES Drain Current I = 7.5A@ T =25 D C Drain Source Voltage V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB