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2SK2987 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK2987
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 70 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 1435 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
   Paquete / Cubierta: 2-16C1B
 

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2SK2987 Datasheet (PDF)

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2SK2987

2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2987 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS = 4.5 m (typ.) (ON) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V =

 8.1. Size:433K  toshiba
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2SK2987

2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2986 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 4.5 m (typ.) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10

 8.2. Size:424K  toshiba
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2SK2987

2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2985 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 4.5 m (typ.) (ON) High forward transfer admittance : |Y | = 70 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10

 8.3. Size:136K  toshiba
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2SK2987

2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK2989 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 120 m (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 0.8~2.0 V

MOSTRAR MÁS

Otros transistores... 2SK2864 , 2SK2867 , 2SK2909 , 2SK2910 , 2SK2911 , 2SK2919 , 2SK2951 , 2SK2969 , IRFP064N , 2SK601 , 2SK614 , 2SK615 , 2SK65 , 2SK690 , 2SK758 , 2SK771 , 2SK772 .

History: NCE9926 | 5N65G-TN3-R | SSM5N16FE | IPB60R160C6 | RJK03E0DNS | AOI600A60 | NCE60N1K0R

 

 
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