2SK2987 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2987
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 70 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 210 nC
Tiempo de subida (tr): 18 nS
Conductancia de drenaje-sustrato (Cd): 1435 pF
Resistencia entre drenaje y fuente RDS(on): 0.0058 Ohm
Paquete / Cubierta: 2-16C1B
Búsqueda de reemplazo de MOSFET 2SK2987
2SK2987 Datasheet (PDF)
2sk2987.pdf
2SK2987 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2987 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS = 4.5 m (typ.) (ON) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V =
2sk2986.pdf
2SK2986 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2986 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 4.5 m (typ.) High forward transfer admittance : |Y | = 80 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10
2sk2985.pdf
2SK2985 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK2985 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 4.5 m (typ.) (ON) High forward transfer admittance : |Y | = 70 S (typ.) fs Low leakage current : I = 100 A (max) (V = 60 V) DSS DS Enhancement-mode : Vth = 1.3~2.5 V (V = 10
2sk2989.pdf
2SK2989 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) 2SK2989 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 120 m (typ.) (ON) High forward transfer admittance : |Y | = 2.6 S (typ.) fs Low leakage current : I = 100 A (max) (V = 50 V) DSS DS Enhancement-mode : Vth = 0.8~2.0 V
2sk2980.pdf
2SK2980 Silicon N Channel MOS FET High Speed Power Switching REJ03G1061-0400 (Previous: ADE-208-571B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 0.2 typ. (VGS = 4 V, ID = 500 mA) 2.5 V gate drive devices. Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A(Package name: MPAK)D31G 1. Source22. Gate3. DrainS
2sk298.pdf
isc N-Channel MOSFET Transistor 2SK298FEATURESDrain Current : I = 8.0A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.75(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 13N50 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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