HUF76423S3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF76423S3S
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 85 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 16 V
Corriente continua de drenaje |Id|: 33 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia entre drenaje y fuente RDS(on): 0.035 Ohm
Paquete / Cubierta: TO263AB
Búsqueda de reemplazo de MOSFET HUF76423S3S
HUF76423S3S Datasheet (PDF)
huf76423d3s.pdf
HUF76423D3, HUF76423D3SData Sheet December 200120A, 60V, 0.037 Ohm, N-Channel, Logic Level UltraFET Power MOSFETFairchildPackagingFeaturesJEDEC TO-251AA JEDEC TO-252AA Ultra Low On-Resistance- rDS(ON) = 0.032, VGS = 10VDRAIN DRAIN- rDS(ON) = 0.037, VGS = 5VSOURCE (FLANGE) (FLANGE)DRAINGATE Simulation Models- Temperature Compensated PSPICE and SABER
huf76423p3.pdf
HUF76423P3, HUF76423S3SData Sheet December 200133A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesDRAIN Ultra Low On-ResistanceSOURCE (FLANGE)DRAIN- rDS(ON) = 0.030, VGS = 10VGATE- rDS(ON) = 0.035, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEElec
huf76423p3.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... HUF76413P3 , HUF76419D3 , HUF76419D3S , HUF76419P3 , HUF76419S3S , HUF76423D3 , HUF76423D3S , HUF76423P3 , IRFB3607 , HUF76429D3 , HUF76429D3S , HUF76429P3 , HUF76429S3S , HUF76432P3 , HUF76432S3S , HUF76437P3 , HUF76437S3S .
