2SK615 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK615
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: M-TYPE

Búsqueda de reemplazo de MOSFET 2SK615

2SK615 Datasheet (PDF)

..1. Size:34K panasonic
2sk615.pdf

Silicon MOS FETs (Small Signal) 2SK6152SK615Silicon N-Channel MOSUnit : mmFor switching6.9 0.1 2.5 0.11.5 Features 1.5 R0.9 1.0R0.9 Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL Easy automatic- /manual-insertion due to M type package. Self-fix-0.85ing to printed circuits board.0.55 0.1 0.45 0.053 2 1 Absolute Maximu

9.1. Size:295K 1
2sk611.pdf

9.2. Size:110K nec
2sk612-z.pdf

9.3. Size:32K panasonic
2sk614.pdf

Silicon MOS FETs (Small Signal) 2SK6142SK614Silicon N-Channel MOSUnit : mmFor switching5.0 0.2 4.0 0.2 Features Low ON-resistance RDS(on) High-speed switching Direct drive possible with CMOS, TTL+0.2 +0.20.45 0.1 0.45 0.11.27 1.27 Absolute Maximum Ratings (Ta = 25C)1 : SourceParameter Symbol Rating Unit2 : Drain3 : GateDrain-Source voltage VDS 80

9.4. Size:235K inchange semiconductor
2sk616.pdf

isc N-Channel MOSFET Transistor 2SK616FEATURESDrain Current I =22A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose applications.ABSOLUTE MAXIMUM RATINGS

9.5. Size:235K inchange semiconductor
2sk617.pdf

isc N-Channel MOSFET Transistor 2SK617FEATURESDrain Current I =1A@ T =25D CDrain Source Voltage-: V = 800V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for low voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dri

9.6. Size:241K inchange semiconductor
2sk610.pdf

isc N-Channel MOSFET Transistor 2SK610FEATURESDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONHigh Voltage.High speed power switching.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

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