2SK758 Todos los transistores

 ..1. Size:33K  panasonic
 2sk758.pdf

Power F-MOS FETs 2SK758 2SK758 Silicon N-Channel Power F-MOS Unit mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) RDS(on) = 0.45 (typ) 5.5 0.2 2.7 0.2 High-speed switching tf = 45ns(typ) No secondary breakdown 3.1 0.1 Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay Solenoid drive +0.2 0.5 -0.1 0.8 0.1 Motor drive 2.54 0.25

 ..2. Size:234K  inchange semiconductor
 2sk758.pdf

isc N-Channel MOSFET Transistor 2SK758 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching applications such as switching regulators, converters, solenoid and relay d

 9.1. Size:233K  inchange semiconductor
 2sk753.pdf

isc N-Channel MOSFET Transistor 2SK753 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 160

 9.2. Size:232K  inchange semiconductor
 2sk757.pdf

isc N-Channel MOSFET Transistor 2SK757 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 20

 9.3. Size:232K  inchange semiconductor
 2sk754.pdf

isc N-Channel MOSFET Transistor 2SK754 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 16

 9.4. Size:240K  inchange semiconductor
 2sk751.pdf

isc N-Channel MOSFET Transistor 2SK751 DESCRIPTION Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 1

 9.5. Size:235K  inchange semiconductor
 2sk750.pdf

isc N-Channel MOSFET Transistor 2SK750 DESCRIPTION Drain Current I = 20A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 1

 9.6. Size:234K  inchange semiconductor
 2sk759.pdf

isc N-Channel MOSFET Transistor 2SK759 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching applications such as switching regulators, converters, solenoid and relay d

 9.7. Size:233K  inchange semiconductor
 2sk752.pdf

isc N-Channel MOSFET Transistor 2SK752 DESCRIPTION Drain Current I = 3A@ T =25 D C Drain Source Voltage- V = 160V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching applications such as switching regulators, converters,relay drivers. ABSOLUTE MAXIMUM RATINGS(T =2

 9.8. Size:234K  inchange semiconductor
 2sk756.pdf

isc N-Channel MOSFET Transistor 2SK756 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMU

 9.9. Size:233K  inchange semiconductor
 2sk755.pdf

isc N-Channel MOSFET Transistor 2SK755 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 200