2SK2715 Todos los transistores

 ..1. Size:138K  rohm
 2sk2715.pdf

Transistors Switching (500V, 2A) 2SK2715 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specificati

 ..2. Size:133K  rohm
 2sk2715 1-5.pdf

 ..3. Size:925K  cn vbsemi
 2sk2715.pdf

2SK2715 www.VBsemi.tw Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Available Requirement RDS(on) ( )VGS = 10 V 1.8 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compliant to RoHS di

 0.1. Size:145K  rohm
 2sk2715tl.pdf

Transistors Switching (500V, 2A) 2SK2715 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specificati

 8.1. Size:42K  1
 2sk2710.pdf

2SK2710 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 600 V I = 100 A, V = 0V (BR) DSS D GS V 600 V DSS I 100 nA V = 30V GSS GS V 30 V GSS I 100 A V = 600V, V = 0V DSS DS GS I 12 A D V 2.0 3.0 4.0 V V = 10V, I = 1mA TH DS D I 48

 8.2. Size:409K  toshiba
 2sk2717.pdf

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2717 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 2.3 (typ.) (ON) High forward transfer admittance Y = 4.4 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1

 8.3. Size:325K  toshiba
 2sk2719.pdf

 8.4. Size:411K  toshiba
 2sk2718.pdf

2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2718 DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 5.6 (typ.) (ON) High forward transfer admittance Y = 2.0 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V (V = 10 V, I = 1

 8.5. Size:144K  rohm
 2sk2714.pdf

Transistors Switching (500V, 10A) 2SK2714 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 1

 8.6. Size:137K  rohm
 2sk2714 1-5.pdf

 8.7. Size:143K  rohm
 2sk2713.pdf

Transistors Switching (450V, 5A) 2SK2713 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 13

 8.8. Size:134K  rohm
 2sk2711 1-5.pdf

 8.9. Size:137K  rohm
 2sk2713 1-5.pdf

 8.10. Size:139K  rohm
 2sk2711.pdf

Transistors Switching (250V, 16A) 2SK2711 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specificat