2SK2739 Todos los transistores

 ..1. Size:145K  rohm
 2sk2739.pdf

Transistors Switching (300V, 16A) 2SK2739 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specificati

 ..2. Size:139K  rohm
 2sk2739 1-5.pdf

 8.1. Size:44K  1
 2sk2734.pdf

2SK2734 Silicon N Channel MOS FET High Speed Power Switching ADE-208-520 (Z) 1st. Edition Jun 1997 Features Low on-resistance RDS(on) = 0.04 typ (at VGS = 10 V, ID = 2.5 A) 4V gate drive devices. Large current capacitance ID = 5 A Outline TO-92MOD. D G 1. Source 3 2 2. Drain 1 3. Gate S 2SK2734 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Un

 8.2. Size:413K  toshiba
 2sk2733.pdf

2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSIII) 2SK2733 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 8.0 (typ.) (ON) High forward transfer admittance Y = 0.9 S (typ.) fs Low leakage current I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode Vth = 2.0 4.0

 8.3. Size:103K  renesas
 rej03g1029 2sk2735lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:94K  renesas
 2sk2738.pdf

2SK2738 Silicon N Channel MOS FET High Speed Power Switching REJ03G1032-0200 (Previous ADE-208-483) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 15 m typ High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S

 8.5. Size:210K  renesas
 2sk2730.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:90K  renesas
 2sk2735.pdf

2SK2735(L), 2SK2735(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1029-0200 (Previous ADE-208-543) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS = 20 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L)-

 8.7. Size:88K  renesas
 2sk2736.pdf

2SK2736 Silicon N Channel MOS FET High Speed Power Switching REJ03G1030-0200 (Previous ADE-208-544) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 20 m typ. (VGS = 10 V, ID = 15 A) 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2 3

 8.8. Size:89K  renesas
 2sk2737.pdf

2SK2737 Silicon N Channel MOS FET High Speed Power Switching REJ03G1031-0400 (Previous ADE-208-533B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 10 m typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 200

 8.9. Size:116K  rohm
 2sk2731 1-5.pdf

 8.10. Size:112K  rohm
 2sk2731.pdf

Transistors Interface and switching (30V, 200mA) 2SK2731 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FEquivalent circuit 146 Transistors 2SK2731 FElectrical characteristics (Ta

 8.11. Size:1015K  kexin
 2sk2731.pdf

SMD Type MOSFET N-Channel MOSFET 2SK2731 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features VDS (V) = 30V 1 2 ID = 0.2 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 RDS(ON) 2.8 (VGS = 10V) RDS(ON) 4.5 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VD

 8.12. Size:1023K  kexin
 2sk2731-3.pdf

SMD Type MOSFET N-Channel MOSFET 2SK2731 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V 1 2 ID = 0.2 A +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 2.8 (VGS = 10V) +0.1 1.9 -0.2 RDS(ON) 4.5 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Volta

 8.13. Size:799K  cn vbsemi
 2sk2738.pdf

2SK2738 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.010 at VGS = 10 V 60 Material categorization 60 0.012 at VGS = 4.5 V 50 TO-220 FULLPAK D G S D S G Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Paramete