2SK2742 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2742
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Paquete / Cubierta: 2-7H1B
- Selección de transistores por parámetros
2SK2742 Datasheet (PDF)
2sk2742.pdf

2SK2742 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2742 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance
2sk2741.pdf

2SK2741 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2741 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.12 (typ.) DS (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancem
2sk2745.pdf

2SK2745 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2745 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 7.0 m (typ.) DS (ON) High forward transfer admittance : |Y | = 50 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 50 V) DS Enhanceme
2sk2746.pdf

2SK2746 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2746 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.3 (typ.) (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V = 10 V, I = 1
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK3272-01SJ | SM8205AO
History: 2SK3272-01SJ | SM8205AO



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