2SK2260 Todos los transistores

 ..1. Size:122K  sanyo
 2sk2260.pdf

Ordering number ENN4753 N-Channel Silicon MOSFET 2SK2260 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SK2260] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 Gate 3.0 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta =

 8.1. Size:422K  toshiba
 2sk2267.pdf

2SK2267 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2267 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 8 m (typ.) DS (ON) High forward transfer admittance Y = 60 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancement

 8.2. Size:411K  toshiba
 2sk2266.pdf

2SK2266 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2266 Chopper Regulator, DC DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 22 m (typ.) DS (ON) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem

 9.1. Size:79K  1
 2sk2275.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-state Resistance RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2

 9.2. Size:458K  1
 2sk2234.pdf

 9.3. Size:34K  1
 2sk2208.pdf

2SK2208 External dimensions 2 ...... FM100 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 5I 100 A V = 900V, V = 0V D A DSS DS GS I 20 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS

 9.4. Size:412K  toshiba
 2sk2229.pdf

2SK2229 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2229 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem

 9.5. Size:419K  toshiba
 2sk2231.pdf

2SK2231 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2231 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.12 (typ.) DS (ON) High forward transfer admittance Y = 5.0 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhancem

 9.6. Size:662K  toshiba
 2sk2230.pdf

 9.7. Size:422K  toshiba
 2sk2201.pdf

2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2201 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

 9.8. Size:401K  toshiba
 2sk2233.pdf

2SK2233 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2233 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.022 (typ.) DS (ON) High forward transfer admittance Y = 27 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 60 V) DS Enhanc

 9.9. Size:395K  toshiba
 2sk2274.pdf

2SK2274 5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII ) 2SK2274 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.5 (typ.) High forward transfer admittance Y = 2.5 S (typ.) fs Low leakage current I = 300 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 1.5

 9.10. Size:544K  toshiba
 2sk2228.pdf

 9.11. Size:426K  toshiba
 2sk2232.pdf

2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2232 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON resistance RDS (ON) = 36 m (typ.) High forward transfer admittance Yfs = 16 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 60 V) Enhancement mode

 9.12. Size:412K  toshiba
 2sk2200.pdf

2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L - -MOSV) 2SK2200 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications 4 V gate drive Low drain-source ON resistance R = 0.28 (typ.) DS (ON) High forward transfer admittance Y = 3.5 S (typ.) fs Low leakage current IDSS = 100 A (max) (V = 100 V) DS Enhance

 9.13. Size:559K  toshiba
 2sk2237.pdf

 9.14. Size:541K  toshiba
 2sk2235.pdf

 9.15. Size:100K  sanyo
 2sk223.pdf

Ordering number EN659K N-Channel Junction Silicon FET 2SK223 High Voltage Driver Applications Features Package Dimensions Ultrahigh withstand voltage (VGDS 80V). unit mm Due to low gate leakage currents even at high 2019B voltage, the 2SK223 is suitable for a wide range of [2SK223] application (IGDL=1nA/VDS=50V, ID=1mA). 5.0 4.0 4.0 High yfs ( yfs =

 9.16. Size:82K  sanyo
 2sk222.pdf

Ordering number EN836G N-Channel Junction Silicon FET 2SK222 Low-Frequency, Low Noise Amplifier Applications Features Package Dimensions Ultralow noise figure. unit mm Large yfs . 2019B Low gate leakage current. [2SK222] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 Source 2 Gate 3 Drain 1 2 3 SANYO NP JEDEC TO-92 1.3 1.3 EIAJ SC-43 Specifications A

 9.17. Size:85K  sanyo
 2sk2273.pdf

Ordering number ENN5047 N-Channel Silicon MOSFET 2SK2273 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK2273] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter

 9.18. Size:134K  sanyo
 2sk2219.pdf

Ordering number ENN4755 N-Channel Junction Silicon FET 2SK2219 Capacitor Microphone Applications Features Package Dimensions Ultrasmall-sized package permitting 2SK2219- unit mm applied sets to be made small and slim. 2058A Especially suited for use in audio, telephone capaci- [2SK2219] tor microphones. Excellent voltage characteristic. 0.3 0.15 Excellent transien

 9.19. Size:213K  sanyo
 2sk2218.pdf

Ordering number ENN5202 N-Channel Junction Silicon FET 2SK2218 High-Frequency Low-Noise Amplifier Applications Features Package Dimensions Adoption of FBET process. unit mm Amateur radio equipment. 2125 UHF amplifiers, MIX, OSC, analog switches. [2SK2218] Large yfs . 4.5 Small Ciss. 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Source 2 Gate 0.75 3 Dra

 9.20. Size:95K  renesas
 rej03g1005 2sk2225ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.21. Size:81K  renesas
 2sk2225.pdf

2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 (Previous ADE-208-140) Rev.2.00 Sep 07, 2005 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package

 9.22. Size:95K  renesas
 rej03g1002 2sk2202ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.23. Size:139K  renesas
 2sk2225-80-e.pdf

Data Sheet 2SK2225-80-E R07DS1275EJ0100 1500V - 2A - MOS FET Rev.1.00 Jun 22, 2015 High Speed Power Switching Features High breakdown voltage (V = 1500 V) DSS High speed switching Low drive current Outline RENESAS Package code PRSS0003ZD-A (Package name TO-3PF) D 1. Gate G 2. Drain 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25 C) Item S

 9.24. Size:85K  renesas
 rej03g1004 2sk2220 2sk2221.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.25. Size:72K  renesas
 2sk2220.pdf

2SK2220, 2SK2221 Silicon N Channel MOS FET REJ03G1004-0200 (Previous ADE-208-1352) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

 9.26. Size:173K  renesas
 2sk2247.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.27. Size:81K  renesas
 2sk2202.pdf

2SK2202 Silicon N Channel MOS FET REJ03G1002-0300 (Previous ADE-208-139) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A

 9.28. Size:135K  rohm
 2sk2294 1-5.pdf

 9.29. Size:137K  rohm
 2sk2299n 1-5.pdf

 9.30. Size:140K  rohm
 2sk2294.pdf

Transistors Switching (800V, 3A) 2SK2294 FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 10

 9.31. Size:142K  rohm
 2sk2299n.pdf

Transistors Switching (450V, 7A) 2SK2299N FFeatures FExternal dimensions (Units mm) 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaran- teed to be 30V. 5) Easily designed drive circuits. 6) Easy to parallel. FStructure Silicon N-channel MOSFET FAbsolute maximum ratings (Ta = 25_C) FPackaging specifications 1

 9.32. Size:23K  panasonic
 2sk2277.pdf

Silicon MOS FETs (Small Signal) 2SK2277 2SK2277 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4 0.08 0.4 0.04 0.5 0.08 magazine packing are available. 1.5 0.1 3.0 0.15 3 2 1 Absolute Maximum Ratings (Ta

 9.33. Size:23K  panasonic
 2sk2211.pdf

Silicon MOS FETs (Small Signal) 2SK2211 2SK2211 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4 0.08 0.4 0.04 0.5 0.08 magazine packing are available. 1.5 0.1 3.0 0.15 3 2 1 Absolute Maximum Ratings (Ta

 9.34. Size:33K  panasonic
 2sk2210.pdf

Power F-MOS FETs 2SK2210 2SK2210 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipm

 9.35. Size:35K  panasonic
 2sk2276.pdf

Power F-MOS FETs 2SK2276 2SK2276 Silicon N-Channel MOS Unit mm For switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 Low ON-resistance RDS(on) High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 1 Gate 1 2 3 2 Drain Drain-Source breakdown voltage VDSS 60 V

 9.36. Size:119K  fuji
 2sk2272-01r.pdf

2SK2272-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching TO-3PF Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Equivalent ci

 9.37. Size:169K  fuji
 2sk2253-01m.pdf

N-channel MOS-FET 2SK2253-01M FAP-IIA Series 250V 0,5 8A 40W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equiv

 9.38. Size:180K  fuji
 2sk2252-01l-01s.pdf

N-channel MOS-FET 2SK2252-01L,S FAP-IIA Series 250V 0,5 8A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equ

 9.39. Size:174K  fuji
 2sk2223.pdf

N-channel MOS-FET 2SK2223-01R FAP-IIA Series 500V 0,76 10A 80W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Eq

 9.40. Size:229K  fuji
 2sk2224-01r.pdf

FUJI POWER MOSFET 2SK2224-01R N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching 5.5 0.3 Low on-resistance 0.3 0.2 15.5 3.2 3.2+0.3 No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof 0.3 2.1 0.3 1.6 +0.2 1.1 0.1 0.2 3.5 Applications 0.2 0.2 5.45 5.45 0.6+0.2 Switc

 9.41. Size:174K  fuji
 2sk2258-01.pdf

 9.42. Size:178K  fuji
 2sk2257-01.pdf

 9.43. Size:201K  fuji
 2sk2255-01mr.pdf

2SK2255-01MR N-channel MOS-FET FAP-IIA Series 250V 0,18 18A 50W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters www.DataSheet4U.com - General Purpose Power Amplifier > Maximum Ratings and

 9.44. Size:178K  fuji
 2sk2251-01.pdf

N-channel MOS-FET 2SK2251-01 FAP-IIA Series 250V 2 2A 20W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Avalanche Proof > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characteristics > Equivale

 9.45. Size:159K  fuji
 2sk2209-01r.pdf

 9.46. Size:55K  hitachi
 2sk2220 2sk2221.pdf

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 9.47. Size:61K  no
 2sk2222.pdf

 9.48. Size:35K  no
 2sk2207.pdf

2SK2207 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 900 V V 900 V I = 100 A, V = 0V DSS (BR) DSS D GS V 30 V I 100 nA V = 30V GSS GSS GS I 3I 100 A V = 900V, V = 0V D A DSS DS GS I 12 A V 2.0 3.0 4.0 V V = 10V, I = 1mA D (pulse) TH DS

 9.49. Size:315K  shindengen
 2sk2284.pdf

 9.50. Size:219K  shindengen
 2sk2287.pdf

 9.51. Size:320K  shindengen
 2sk2282.pdf

 9.52. Size:348K  shindengen
 2sk2291.pdf

 9.53. Size:314K  shindengen
 2sk2286.pdf

 9.54. Size:370K  shindengen
 2sk2280.pdf

 9.55. Size:324K  shindengen
 2sk2288.pdf

 9.56. Size:843K  kexin
 2sk2211.pdf

SMD Type MOSFET N-Channel MOSFET 2SK2211 1.70 0.1 Features VDS (V) = 30V ID = 1A 0.42 0.1 RDS(ON) 0.75 (VGS = 4V) 0.46 0.1 RDS(ON) 0.6 (VGS = 10V) D G 1.Gate 2.Drain 3.Source S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1 A

 9.57. Size:848K  cn vbsemi
 2sk2231.pdf

2SK2231 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters Motor

 9.58. Size:1981K  cn vbsemi
 2sk2232.pdf

 9.59. Size:215K  inchange semiconductor
 2sk2253-01m.pdf

isc N-Channel MOSFET Transistor 2SK2253-01M DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drai

 9.60. Size:211K  inchange semiconductor
 2sk2221.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2221 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High efficiency switch

 9.61. Size:209K  inchange semiconductor
 2sk2258.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK2258 FEATURES With TO-3PN packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 9.62. Size:51K  inchange semiconductor
 2sk2236.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2236 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V

 9.63. Size:214K  inchange semiconductor
 2sk2274.pdf

isc N-Channel MOSFET Transistor 2SK2274 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

 9.64. Size:209K  inchange semiconductor
 2sk2237.pdf

isc N-Channel MOSFET Transistor 2SK2237 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain

 9.65. Size:222K  inchange semiconductor
 2sk2257-01.pdf

isc N-Channel MOSFET Transistor 2SK2257-01 DESCRIPTION Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 9.66. Size:213K  inchange semiconductor
 2sk2299.pdf

isc N-Channel MOSFET Transistor 2SK2299 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 450 V DSS

 9.67. Size:222K  inchange semiconductor
 2sk2224-01.pdf

isc N-Channel MOSFET Transistor 2SK2224-01 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO

 9.68. Size:218K  inchange semiconductor
 2sk2251-01.pdf

isc N-Channel MOSFET Transistor 2SK2251-01 DESCRIPTION Drain Current I = 2A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

 9.69. Size:214K  inchange semiconductor
 2sk2291.pdf

isc N-Channel MOSFET Transistor 2SK2291 DESCRIPTION Drain Current I = 45A@ T =25 D C Drain Source Voltage- V = 60V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

 9.70. Size:221K  inchange semiconductor
 2sk2257.pdf

isc N-Channel MOSFET Transistor 2SK2257 DESCRIPTION Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL

 9.71. Size:199K  inchange semiconductor
 2sk2223-01.pdf

isc N-Channel MOSFET Transistor 2SK2223-01 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor control UPS DC-DC converters General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAM