2SK2260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Ordering number:ENN4753N-Channel Silicon MOSFET2SK2260Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SK2260]4.51.51.60.4 0.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta =

2SK2267 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2267 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 8 m (typ.) DS (ON) High forward transfer admittance : |Y | = 60 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancement

2SK2266 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2266 Chopper Regulator, DCDC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 22 m (typ.) DS (ON) High forward transfer admittance : |Y | = 27 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancem

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2275SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2275 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-state ResistanceRDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2

2SK2208External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 900 V V 900 V I = 100A, V = 0VDSS (BR) DSS D GSV 30 V I 100 nA V = 30VGSS GSS GSI 5I 100 A V = 900V, V = 0VD A DSS DS GSI 20 A V 2.0 3.0 4.0 V V = 10V, I = 1mAD (pulse) TH DS

2SK2229 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2229 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.12 (typ.) DS (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancem

2SK2231 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2231 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.12 (typ.) DS (ON) High forward transfer admittance : |Y | = 5.0 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhancem

2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2201 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance

2SK2233 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L -MOSV) 2SK2233 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.022 (typ.) DS (ON) High forward transfer admittance : |Y | = 27 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 60 V) DS Enhanc

2SK2274 5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK2274 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Y | = 2.5 S (typ.) fs Low leakage current : I = 300 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 1.5

2SK2232 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2232 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 36 m (typ.) High forward transfer admittance : |Yfs| = 16 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode :

2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2200 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance

Ordering number:EN659KN-Channel Junction Silicon FET2SK223High Voltage Driver ApplicationsFeatures Package Dimensions Ultrahigh withstand voltage (VGDS 80V).unit:mm Due to low gate leakage currents even at high2019Bvoltage, the 2SK223 is suitable for a wide range of[2SK223]application (IGDL=1nA/VDS=50V, ID=1mA).5.04.04.0 High yfs ( yfs =

Ordering number:EN836GN-Channel Junction Silicon FET2SK222Low-Frequency,Low Noise Amplifier ApplicationsFeatures Package Dimensions Ultralow noise figure.unit:mm Large yfs .2019B Low gate leakage current.[2SK222]5.04.04.00.450.50.440.451 : Source2 : Gate3 : Drain1 2 3SANYO : NPJEDEC : TO-921.3 1.3EIAJ : SC-43SpecificationsA

Ordering number:ENN5047N-Channel Silicon MOSFET2SK2273Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK2273]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

Ordering number:ENN4755N-Channel Junction Silicon FET2SK2219Capacitor Microphone ApplicationsFeatures Package Dimensions Ultrasmall-sized package permitting 2SK2219-unit:mmapplied sets to be made small and slim.2058A Especially suited for use in audio, telephone capaci-[2SK2219]tor microphones. Excellent voltage characteristic.0.30.15 Excellent transien

Ordering number:ENN5202N-Channel Junction Silicon FET2SK2218High-Frequency Low-Noise AmplifierApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm Amateur radio equipment.2125 UHF amplifiers, MIX, OSC, analog switches.[2SK2218] Large | yfs |.4.5 Small Ciss.1.51.60.4 0.53 2 10.41.53.0 1 : Source2 : Gate0.753 : Dra

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 (Previous: ADE-208-140) Rev.2.00 Sep 07, 2005 Application High speed power switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA-A(Package

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Data Sheet 2SK2225-80-E R07DS1275EJ01001500V - 2A - MOS FET Rev.1.00Jun 22, 2015High Speed Power Switching Features High breakdown voltage (V = 1500 V) DSS High speed switching Low drive current Outline RENESAS Package code: PRSS0003ZD-A(Package name: TO-3PF)D1. GateG2. Drain3. SourceS123Absolute Maximum Ratings (Ta = 25C) Item S

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2220, 2SK2221 Silicon N Channel MOS FET REJ03G1004-0200 (Previous: ADE-208-1352) Rev.2.00 Sep 07, 2005 Application Low frequency power amplifier Complementary pair with 2SJ351, 2SJ352 Features High power gain Excellent frequency response High speed switching Wide area of safe operation Enhancement-mode Good complementary characteristics

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2202 Silicon N Channel MOS FET REJ03G1002-0300 (Previous: ADE-208-139) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A

TransistorsSwitching (800V, 3A)2SK2294FFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications10

TransistorsSwitching (450V, 7A)2SK2299NFFeatures FExternal dimensions (Units: mm)1) Low on-resistance.2) Fast switching speed.3) Wide SOA (safe operating area).4) Gate-source voltage (VGSS) guaran-teed to be 30V.5) Easily designed drive circuits.6) Easy to parallel.FStructureSilicon N-channel MOSFETFAbsolute maximum ratings (Ta = 25_C)FPackaging specifications1

Silicon MOS FETs (Small Signal) 2SK22772SK2277Silicon N-Channel MOSUnit : mmFor switching1.5 0.14.5 0.11.6 0.2 Features Low ON-resistance RDS(on)45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by0.4 0.080.4 0.040.5 0.08magazine packing are available.1.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta

Silicon MOS FETs (Small Signal) 2SK22112SK2211Silicon N-Channel MOSUnit : mmFor switching1.5 0.14.5 0.11.6 0.2 Features Low ON-resistance RDS(on)45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by0.4 0.080.4 0.040.5 0.08magazine packing are available.1.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta

Power F-MOS FETs 2SK22102SK2210Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdown2.6 0.1 Applications1.2 0.151.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2Motor drive5.08 0.4Control equipm

Power F-MOS FETs 2SK22762SK2276Silicon N-Channel MOSUnit : mmFor switching6.5 0.15.3 0.14.35 0.1 Features3.0 0.1Low ON-resistance RDS(on)High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)Parameter Symbol Rating Unit1 : Gate1 2 32 : DrainDrain-Source breakdown voltage VDSS 60 V

2SK2272-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS= 30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsEquivalent ci

N-channel MOS-FET2SK2253-01MFAP-IIA Series 250V 0,5 8A 40W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiv

N-channel MOS-FET2SK2252-01L,SFAP-IIA Series 250V 0,5 8A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equ

N-channel MOS-FET2SK2223-01RFAP-IIA Series 500V 0,76 10A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Eq

FUJI POWER MOSFET2SK2224-01RN-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESOutline DrawingsFeaturesHigh speed switching5.50.3Low on-resistance0.30.215.53.23.2+0.3No secondary breakdownLow driving powerHigh voltageVGS= 30V GuaranteeAvalanche-proof0.32.10.3 1.6+0.2 1.10.10.2 3.5Applications0.20.25.45 5.45 0.6+0.2Switc

2SK2255-01MR N-channel MOS-FETFAP-IIA Series 250V 0,18 18A 50W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converterswww.DataSheet4U.com- General Purpose Power Amplifier> Maximum Ratings and

N-channel MOS-FET2SK2251-01FAP-IIA Series 250V 2 2A 20W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equivale

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

2SK2207External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 900 V V 900 V I = 100A, V = 0VDSS (BR) DSS D GSV 30 V I 100 nA V = 30VGSS GSS GSI 3I 100 A V = 900V, V = 0VD A DSS DS GSI 12 A V 2.0 3.0 4.0 V V = 10V, I = 1mAD (pulse) TH DS

SMD Type MOSFETN-Channel MOSFET2SK22111.70 0.1 Features VDS (V) = 30V ID = 1A0.42 0.1 RDS(ON) 0.75 (VGS = 4V) 0.46 0.1 RDS(ON) 0.6 (VGS = 10V)DG1.Gate2.Drain3.SourceS Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 30V Gate-Source Voltage VGS 20 Continuous Drain Current ID 1A

2SK2231www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters Motor

2SK2232www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Isolated PackageVDS (V) 60 High Voltage Isolation = 2.5 kVRMS (t = 60 s;RoHSRDS(on) ()VGS = 10 V 0.027f = 60 Hz) COMPLIANTQg (Max.) (nC) 95 Sink to Lead Creepage Distance = 4.8 mmQgs (nC) 27 175 C Operating TemperatureQgd (nC) 46 Dynamic dV/dt RatingConfiguration Single

isc N-Channel MOSFET Transistor 2SK2253-01MDESCRIPTIONDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drai

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2221FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.3(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh efficiency switch

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2258FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2236 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS Switching regulators ,DC-DC converter,Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V

isc N-Channel MOSFET Transistor 2SK2274DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

isc N-Channel MOSFET Transistor 2SK2237DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulators ,DC-DC converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

isc N-Channel MOSFET Transistor 2SK2257-01DESCRIPTIONDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYM

isc N-Channel MOSFET Transistor 2SK2299DESCRIPTIONDrain Current I = 7A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 450 VDSS

isc N-Channel MOSFET Transistor 2SK2224-01DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

isc N-Channel MOSFET Transistor 2SK2251-01DESCRIPTIONDrain Current I = 2A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc N-Channel MOSFET Transistor 2SK2291DESCRIPTIONDrain Current I = 45A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

isc N-Channel MOSFET Transistor 2SK2257DESCRIPTIONDrain Current I = 17A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

isc N-Channel MOSFET Transistor 2SK2223-01DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAM