2SK2274 Todos los transistores

 ..1. Size:395K  toshiba
 2sk2274.pdf

2SK2274 5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSII ) 2SK2274 Chopper Regulator, DC-DC Converter and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 1.5 (typ.) High forward transfer admittance Y = 2.5 S (typ.) fs Low leakage current I = 300 A (max) (V = 640 V) DSS DS Enhancement-mode Vth = 1.5

 ..2. Size:214K  inchange semiconductor
 2sk2274.pdf

isc N-Channel MOSFET Transistor 2SK2274 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 700V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching Regulators DC-DC Converter, Motor Control ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dr

 8.1. Size:79K  1
 2sk2275.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2275 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2275 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-state Resistance RDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2

 8.2. Size:85K  sanyo
 2sk2273.pdf

Ordering number ENN5047 N-Channel Silicon MOSFET 2SK2273 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SK2273] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter

 8.3. Size:23K  panasonic
 2sk2277.pdf

Silicon MOS FETs (Small Signal) 2SK2277 2SK2277 Silicon N-Channel MOS Unit mm For switching 1.5 0.1 4.5 0.1 1.6 0.2 Features Low ON-resistance RDS(on) 45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by 0.4 0.08 0.4 0.04 0.5 0.08 magazine packing are available. 1.5 0.1 3.0 0.15 3 2 1 Absolute Maximum Ratings (Ta

 8.4. Size:35K  panasonic
 2sk2276.pdf

Power F-MOS FETs 2SK2276 2SK2276 Silicon N-Channel MOS Unit mm For switching 6.5 0.1 5.3 0.1 4.35 0.1 Features 3.0 0.1 Low ON-resistance RDS(on) High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 1 Gate 1 2 3 2 Drain Drain-Source breakdown voltage VDSS 60 V

 8.5. Size:119K  fuji
 2sk2272-01r.pdf

2SK2272-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Features Outline Drawings High speed switching TO-3PF Low on-resistance No secondary breakdown Low driving power High voltage VGS= 30V Guarantee Avalanche-proof Applications Switching regulators UPS DC-DC converters General purpose power amplifier Maximum ratings and characteristics Equivalent ci