2SK2276 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2276
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 10 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 210 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
   Paquete / Cubierta: SC63

Búsqueda de reemplazo de MOSFET 2SK2276

2SK2276 Datasheet (PDF)

..1. Size:35K panasonic
2sk2276.pdf

Power F-MOS FETs 2SK22762SK2276Silicon N-Channel MOSUnit : mmFor switching6.5 0.15.3 0.14.35 0.1 Features3.0 0.1Low ON-resistance RDS(on)High-speed switching1.0 0.10.85 0.1 0.75 0.1 0.5 0.14.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25C)Parameter Symbol Rating Unit1 : Gate1 2 32 : DrainDrain-Source breakdown voltage VDSS 60 V

8.1. Size:79K 1
2sk2275.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK2275SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2275 is N-channel Power MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications.10.0 0.3 4.5 0.23.2 0.2FEATURES2.7 0.2 Low On-state ResistanceRDS(on) = 2.8 MAX. (VGS = 10 V, ID = 2

8.2. Size:395K toshiba
2sk2274.pdf

2SK2274 5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK2274 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications Low drain-source ON resistance : RDS (ON) = 1.5 (typ.) High forward transfer admittance : |Y | = 2.5 S (typ.) fs Low leakage current : I = 300 A (max) (V = 640 V) DSS DS Enhancement-mode : Vth = 1.5

8.3. Size:85K sanyo
2sk2273.pdf

Ordering number:ENN5047N-Channel Silicon MOSFET2SK2273Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SK2273]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter

8.4. Size:23K panasonic
2sk2277.pdf

Silicon MOS FETs (Small Signal) 2SK22772SK2277Silicon N-Channel MOSUnit : mmFor switching1.5 0.14.5 0.11.6 0.2 Features Low ON-resistance RDS(on)45 High-speed switching Downsizing of sets by mini-type package and automatic insertion by0.4 0.080.4 0.040.5 0.08magazine packing are available.1.5 0.13.0 0.153 2 1 Absolute Maximum Ratings (Ta

8.5. Size:119K fuji
2sk2272-01r.pdf

2SK2272-01RFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIA SERIESFeaturesOutline DrawingsHigh speed switching TO-3PFLow on-resistanceNo secondary breakdownLow driving powerHigh voltageVGS= 30V GuaranteeAvalanche-proofApplicationsSwitching regulatorsUPS DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsEquivalent ci

8.6. Size:214K inchange semiconductor
2sk2274.pdf

isc N-Channel MOSFET Transistor 2SK2274DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 700V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching RegulatorsDC-DC Converter,Motor ControlABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Dr

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