2SJ609 Todos los transistores

 

2SJ609 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ609

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 10 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 90 pF

Resistencia drenaje-fuente RDS(on): 0.295 Ohm

Empaquetado / Estuche: TO126ML

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2SJ609 Datasheet (PDF)

1.1. 2sj609.pdf Size:30K _sanyo

2SJ609
2SJ609

Ordering number : ENN6671 2SJ609 P-Channel Silicon MOSFET 2SJ609 DC / DC Converter Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2190 4V drive. [2SJ609] 8.0 4.0 3.3 1.0 1.0 3.0 1.6 0.8 0.8 0.75 0.7 1 : Source 1 2 3 2 : Drain 3 : Gate 2.4 4.8 SANYO : TO-126ML Specifications Absolute Maximum Ratings at Ta=25C Parame

5.1. 2sj608.pdf Size:27K _sanyo

2SJ609
2SJ609

Ordering number : ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh speed switching. 2085A Low-voltage drive. [2SJ608] 4.5 Mounting height 9.5mm. 1.9 2.6 10.5 Meets radial taping. 1.2 1.4 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate Specifications 2.5 2.5

5.2. 2sj603.pdf Size:79K _nec

2SJ609
2SJ609

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ603 SWITCHING P-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SJ603 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ603 TO-220AB 2SJ603-S TO-262 FEATURES 2SJ603-ZJ TO-263 Super low on-state resistance: Note RDS(on)1 = 48 m? MAX. (VGS = -10 V, ID = -13 A) 2SJ603-Z

 5.3. 2sj605.pdf Size:83K _nec

2SJ609
2SJ609

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ605 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ605 TO-220AB 2SJ605-S TO-262 FEATURES 2SJ605-ZJ TO-263 Super low on-state resistance: 2SJ605-Z TO-220SMDNote RDS(on)1 = 20 m? MA

5.4. 2sj604-s-z-zj.pdf Size:207K _nec

2SJ609
2SJ609

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 5.5. 2sj605-s-z-zj.pdf Size:211K _nec

2SJ609
2SJ609

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.6. 2sj607-s-z-zj.pdf Size:206K _nec

2SJ609
2SJ609

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.7. 2sj604.pdf Size:79K _nec

2SJ609
2SJ609

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ604 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ604 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ604 TO-220AB 2SJ604-S TO-262 FEATURES 2SJ604-ZJ TO-263 Super low on-state resistance: Note RDS(on)1 = 30 m? MAX. (VGS = -10 V, ID = -23 A) 2SJ604-Z

5.8. 2sj606-s-z-zj.pdf Size:206K _nec

2SJ609
2SJ609

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.9. 2sj602.pdf Size:81K _nec

2SJ609
2SJ609

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ602 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ602 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ602 TO-220AB 2SJ602-S TO-262 FEATURES 2SJ602-ZJ TO-263 Super low on-state resistance: Note RDS(on)1 = 73 m? MAX. (VGS = -10 V, ID = -10 A) 2SJ602-Z

5.10. 2sj601.pdf Size:54K _nec

2SJ609
2SJ609

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ601 TO-251 2SJ601-Z TO-252 FEATURES Low on-state resistance: RDS(on)1 = 31 m? MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 =

5.11. 2sj600-z.pdf Size:238K _nec

2SJ609
2SJ609

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.12. 2sj607.pdf Size:77K _nec

2SJ609
2SJ609

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ607 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ607 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ607 TO-220AB 2SJ607-S TO-262 FEATURES 2SJ607-ZJ TO-263 Super low on-state resistance: Note RDS(on)1 = 11 m? MAX. (VGS = -10 V, ID = -42 A) 2SJ60

5.13. 2sj601-z.pdf Size:52K _nec

2SJ609
2SJ609

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ601 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ601 TO-251 2SJ601-Z TO-252 FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A)

5.14. 2sj602-s-z-zj.pdf Size:209K _nec

2SJ609
2SJ609

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.15. 2sj606.pdf Size:78K _nec

2SJ609
2SJ609

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ606 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SJ606 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for high current switching applications. 2SJ606 TO-220AB 2SJ606-S TO-262 FEATURES 2SJ606-ZJ TO-263 Super low on-state resistance: Note RDS(on)1 = 15 m? MAX. (VGS = -10 V, ID = -42 A) 2SJ60

5.16. 2sj600.pdf Size:40K _nec

2SJ609
2SJ609

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ600 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SJ600 is P-channel MOS Field Effect Transistor designed PART NUMBER PACKAGE for solenoid, motor and lamp driver. 2SJ600 TO-251 2SJ600-Z TO-252 FEATURES Low on-state resistance: RDS(on)1 = 50 m? MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 =

5.17. 2sj603-s-z-zj.pdf Size:207K _nec

2SJ609
2SJ609

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.18. 2sj606-zj.pdf Size:1510K _kexin

2SJ609
2SJ609

SMD Type MOSFET P-Channel MOSFET 2SJ606-ZJ ■ Features ● VDS (V) =-60V ● ID =-83A ● RDS(ON) < 15mΩ (VGS =-10V) ● RDS(ON) < 23mΩ (VGS =-4V) ● Low Ciss: Ciss = 4800 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20

5.19. 2sj602-zj.pdf Size:1557K _kexin

2SJ609
2SJ609

SMD Type MOSFET P-Channel MOSFET 2SJ602-ZJ ■ Features ● VDS (V) =-60V ● ID =-20A ● RDS(ON) < 73m Ω (VGS =-10V) ● RDS(ON) < 107mΩ (VGS =-4V) ● Low Ciss: Ciss = 1300 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±2

5.20. 2sj605-zj.pdf Size:1542K _kexin

2SJ609
2SJ609

SMD Type MOSFET P-Channel MOSFET 2SJ605-ZJ ■ Features ● VDS (V) =-60V ● ID =-65A ● RDS(ON) < 20mΩ (VGS =-10V) ● RDS(ON) < 31mΩ (VGS =-4V) ● Low Ciss: Ciss = 4600 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20

5.21. 2sj607-zj.pdf Size:1500K _kexin

2SJ609
2SJ609

SMD Type MOSFET P-Channel MOSFET 2SJ607-ZJ ■ Features ● VDS (V) =-60V ● ID =-83A ● RDS(ON) < 11mΩ (VGS =-10V) ● RDS(ON) < 16mΩ (VGS =-4V) ● Low Ciss: Ciss = 7500 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20

5.22. 2sj600-z.pdf Size:937K _kexin

2SJ609
2SJ609

SMD Type MOSFET P-Channel MOSFET 2SJ600-Z TO-252 Unit: mm +0.15 6.50-0.15 +0.1 ■ Features 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 ● VDS (V) =-60V ● ID =-25A ● RDS(ON) < 50mΩ (VGS =-10V) 0.127 +0.1 0.80-0.1 ● RDS(ON) < 79mΩ (VGS =-4V) max ● Low Ciss: Ciss = 1900 pF (TYP.) + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Drain 3 Source Drain Body

5.23. 2sj604-zj.pdf Size:1564K _kexin

2SJ609
2SJ609

SMD Type MOSFET P-Channel MOSFET 2SJ604-ZJ ■ Features ● VDS (V) =-60V ● ID =-45A ● RDS(ON) < 30mΩ (VGS =-10V ) ● RDS(ON) < 43mΩ (VGS =-4V) ● Low Ciss: Ciss = 3300 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20

5.24. 2sj603-zj.pdf Size:1555K _kexin

2SJ609
2SJ609

SMD Type MOSFET P-Channel MOSFET 2SJ603-ZJ ■ Features ● VDS (V) =-60V ● ID =-25A ● RDS(ON) < 48mΩ (VGS =-10V) ● RDS(ON) < 75mΩ (VGS =-4V) ● Low Ciss: Ciss = 1900 pF (TYP.) Drain Body Gate Diode Gate Protection Source Diode ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20

Otros transistores... 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .

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