2SK2616 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2616
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 3.5 V
Carga de la puerta (Qg): 8 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 100 pF
Resistencia entre drenaje y fuente RDS(on): 4 Ohm
Paquete / Cubierta: TP
Búsqueda de reemplazo de MOSFET 2SK2616
2SK2616 Datasheet (PDF)
2sk2616.pdf
Ordering number:ENN5620BN-Channel Silicon MOSFET2SK2616Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Low Qg.2083B[2SK2616]6.52.35.00.540.850.71.20.60.51 : Gate2 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SK2616]6.5 2.35.0 0.540.50.851 2 30.61 : Gate1
2sk2610.pdf
2SK2610 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2610 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 2.3 (typ.) (ON) High forward transfer admittance : |Y | 4.4 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0
2sk2611.pdf
2SK2611 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2611 DC-DC Converter, Relay Drive and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS = 1.1 (typ.) (ON) High forward transfer admittance : |Y | 7.0 S (typ.) fs = Low leakage current : I = 100 A (max) (V = 720 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (V =
2sk2613.pdf
2SK2613 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSIII) 2SK2613 Switching Regulator Applications, DC-DC Converter and Unit: mmMotor Drive Applications Low drain-source ON-resistance: RDS (ON) = 1.4 (typ.) High forward transfer admittance: Yfs = 6.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 800 V) Enhancement-mod
2sk2614.pdf
2SK2614 2 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L --MOSV) 2SK2614 Unit: mmChopper Regulator, DC-DC Converter and Motor Drive 6.8 MAX. Applications 5.2 0.2 0.6 MAX. 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 0.032 (typ.) High forward transfer admittance : |Yfs| = 13 S (typ.) 0.95 MAX. Low leakage current : IDSS = 1
2sk2615.pdf
2SK2615 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2615 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 0.23 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode : Vth = 0.8 to 2.0 V (VD
2sk2617als.pdf
Ordering number : ENA0361A 2SK2617ALSSANYO SemiconductorsDATA SHEETN-Channel Silicon MOSFETGeneral-Purpose Switching Device2SK2617ALSApplicationsFeatures Low ON-resistance. Low Qg. Ultrahigh-speed switching.SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage VDSS 500 VGate-to-Source Voltage VGSS
2sk2619.pdf
2SK2619TENTATIVEFeatures and Applications Low ON-state resistance. Low Qg Absoulute Maximum Ratings / Ta=25CunitDrain to Source Voltage VDSS 500 V 30Gate to Source Voltage VGSS VDrain Current (D.C.) 6 AIDDrain Current (Pulse) AIDP 24Allowable power Dissipation PD (TC=25C) 70 WChannel Temperature 150Tch C Storage TemperatureTstg --55 to +150 C
2sk2615.pdf
2SK2615www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise no
2sk2611.pdf
isc N-Channel MOSFET Transistor 2SK2611DESCRIPTIONDrain Current I =9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSlow onresistance.High speed switching.No secondary breakdown.Suitable for switchingregulator, DCDC control.A
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