2SK2682 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2682
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 300 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: TO220FI

Búsqueda de reemplazo de MOSFET 2SK2682

2SK2682 Datasheet (PDF)

..1. Size:27K sanyo
2sk2682.pdf

Ordering number : ENN67832SK2682N-Channel Silicon MOSFET2SK2682Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed diode. 2078B Micaless package facilitating mounting.[2SK2682]4.510.02.83.20.91.20.70.751 : Gate1 2 3 2 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220FI-LSAbsolute

0.1. Size:30K sanyo
2sk2682ls.pdf

Ordering number : ENN6783A2SK2682LSN-Channel Silicon MOSFET2SK2682LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm High-speed diode. 2078C Micaless package facilitating mounting.[2SK2682LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55SANYO : TO-220FI(LS)

8.1. Size:90K renesas
2sk2684.pdf

2SK2684(L), 2SK2684(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1022-0200 (Previous: ADE-208-542) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code:

8.2. Size:104K renesas
rej03g1022 2sk2684lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.3. Size:296K fuji
2sk2688-01l-01s.pdf

2SK2688-01L,SFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeatures Outline DrawingsT-Pack(L)High speed switching T-Pack(S)Low on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierL-typeS-typeEIAJMaximum ratings and characteristicsAbso

8.4. Size:295K fuji
2sk2689-01mr.pdf

2SK2689-01MRFUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220FHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unl

8.5. Size:295K fuji
2sk2687-01.pdf

2SK2687-01FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETFAP-IIIB SERIESFeaturesOutline DrawingsTO-220ABHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerHigh voltageAvalanche-proofApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unle

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