2SJ190 Todos los transistores

 

2SJ190 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ190

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.5 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 15 V

Corriente continua de drenaje (Id): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 13 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 1.2 Ohm

Empaquetado / Estuche: PCP

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2SJ190 Datasheet (PDF)

1.1. 2sj190.pdf Size:93K _sanyo

2SJ190
2SJ190

Ordering number:EN3763 P-Channel Silicon MOSFET 2SJ190 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ190] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol

5.1. 2sj193.pdf Size:123K _sanyo

2SJ190
2SJ190

Ordering number:EN3766 P-Channel Silicon MOSFET 2SJ193 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ193] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol

5.2. 2sj195.pdf Size:122K _sanyo

2SJ190
2SJ190

Ordering number:EN3768A P-Channel Silicon MOSFET 2SJ195 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ195] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ195] 6.5 2.3 5.0 0.5 4 0.5 0.85 1

 5.3. 2sj194.pdf Size:117K _sanyo

2SJ190
2SJ190

Ordering number:EN3767 P-Channel Silicon MOSFET 2SJ194 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ194] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ194] 6.5 2.3 5.0 0.5 4 0.5 0.85 1

5.4. 2sj192.pdf Size:118K _sanyo

2SJ190
2SJ190

Ordering number:EN3765 P-Channel Silicon MOSFET 2SJ192 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ192] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ192] 6.5 2.3 5.0 0.5 4 0.5 0.85 1

 5.5. 2sj191.pdf Size:89K _sanyo

2SJ190
2SJ190

Ordering number:EN3764A P-Channel Silicon MOSFET 2SJ191 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ191] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ191] 6.5 2.3 5.0 0.5 4 0.5 0.85 1

5.6. 2sj197.pdf Size:301K _nec

2SJ190
2SJ190

5.7. 2sj196.pdf Size:386K _nec

2SJ190
2SJ190

5.8. 2sj199.pdf Size:308K _nec

2SJ190
2SJ190

5.9. 2sj198.pdf Size:343K _nec

2SJ190
2SJ190

5.10. 2sj197.pdf Size:1281K _kexin

2SJ190
2SJ190

SMD Type MOSFET P-Channel MOSFET 2SJ197 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-1.5 A 0.42 0.1 0.46 0.1 ● RDS(ON) < 1Ω (VGS =-10V) ● RDS(ON) < 1.5Ω (VGS =-4V) ● Comp;ementary to 2SK1483 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 Continuou

5.11. 2sj199.pdf Size:1320K _kexin

2SJ190
2SJ190

SMD Type MOSFET P-Channel MOSFET 2SJ199 1.70 0.1 ■ Features ● VDS (V) =-100V ● ID =-1 A (VGS =-10V) 0.42 0.1 0.46 0.1 ● RDS(ON) < 2Ω (VGS =-10V) ● RDS(ON) < 2.5Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -100 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID

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