2SK2574 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2574
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 45 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 680 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Paquete / Cubierta: TO220E
Búsqueda de reemplazo de MOSFET 2SK2574
2SK2574 Datasheet (PDF)
2sk2574.pdf
Power F-MOS FETs 2SK25742SK2574(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.25.08 0.
2sk2573.pdf
Power F-MOS FETs 2SK25742SK2573(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Contr
2sk2571.pdf
Power F-MOS FETs 2SK25722SK2571(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Contr
2sk2572.pdf
Power F-MOS FETs 2SK25722SK2572(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Contr
2sk2578.pdf
Power F-MOS FETs 2SK25782SK2578(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08
2sk2579.pdf
Power F-MOS FETs 2SK25792SK2579(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.2 9.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.2 5.08
2sk2576.pdf
Power F-MOS FETs 2SK25762SK2576(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.151.45 0.15 0.7 0.1 Applications0.75 0.1Non-contact relay2.54 0.2Solenoid drive5.08 0.
2sk2577.pdf
Power F-MOS FETs 2SK25772SK2577(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.25.08 0.
2sk2575.pdf
Power F-MOS FETs 2SK25752SK2575(Tentative)Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed4.6 0.29.9 0.3 2.9 0.2High-speed switching3.2 0.1Low ON-resistanceNo secondary breakdownLow-voltage drive2.6 0.11.2 0.15 Applications1.45 0.15 0.7 0.1Non-contact relay0.75 0.1Solenoid drive2.54 0.25.08 0.
2sk2571.pdf
Isc N-Channel MOSFET Transistor 2SK2571FEATURESWith To-3PML packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 450
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ME2602
History: ME2602
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918