2SK2579 Todos los transistores

 ..1. Size:34K  panasonic
 2sk2579.pdf

Power F-MOS FETs 2SK2579 2SK2579(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08

 8.1. Size:34K  panasonic
 2sk2574.pdf

Power F-MOS FETs 2SK2574 2SK2574(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.

 8.2. Size:24K  panasonic
 2sk2573.pdf

Power F-MOS FETs 2SK2574 2SK2573(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Contr

 8.3. Size:24K  panasonic
 2sk2571.pdf

Power F-MOS FETs 2SK2572 2SK2571(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Contr

 8.4. Size:36K  panasonic
 2sk2572.pdf

Power F-MOS FETs 2SK2572 2SK2572(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 15.5 0.5 3.0 0.3 3.2 0.1 High-speed switching 5 5 Low ON-resistance No secondary breakdown 5 5 4.0 Applications 5 2.0 0.2 1.1 0.1 Non-contact relay 0.7 0.1 Solenoid drive 5.45 0.3 5.45 0.3 Motor drive 5 Contr

 8.5. Size:34K  panasonic
 2sk2578.pdf

Power F-MOS FETs 2SK2578 2SK2578(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08

 8.6. Size:34K  panasonic
 2sk2576.pdf

Power F-MOS FETs 2SK2576 2SK2576(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 1.45 0.15 0.7 0.1 Applications 0.75 0.1 Non-contact relay 2.54 0.2 Solenoid drive 5.08 0.

 8.7. Size:34K  panasonic
 2sk2577.pdf

Power F-MOS FETs 2SK2577 2SK2577(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.

 8.8. Size:35K  panasonic
 2sk2575.pdf

Power F-MOS FETs 2SK2575 2SK2575(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08 0.

 8.9. Size:263K  inchange semiconductor
 2sk2571.pdf

Isc N-Channel MOSFET Transistor 2SK2571 FEATURES With To-3PML package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 450