2SK2580 Todos los transistores

 ..1. Size:34K  panasonic
 2sk2580.pdf

Power F-MOS FETs 2SK2580 2SK2580(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08

 8.1. Size:104K  renesas
 rej03g1020 2sk2586ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:90K  renesas
 2sk2586.pdf

2SK2586 Silicon N Channel MOS FET REJ03G1020-0500 (Previous ADE-208-358C) Rev.5.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance RDS(on) = 7 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange

 8.3. Size:34K  panasonic
 2sk2581.pdf

Power F-MOS FETs 2SK2581 2SK2581(Tentative) Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed 4.6 0.2 9.9 0.3 2.9 0.2 High-speed switching 3.2 0.1 Low ON-resistance No secondary breakdown Low-voltage drive 2.6 0.1 1.2 0.15 Applications 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 5.08

 8.4. Size:30K  panasonic
 2sk2588.pdf

Power F-MOS FETs 2SK2588 2SK2588 Silicon N-Channel Power F-MOS Unit mm Features High-speed switching 4.6 0.2 9.9 0.3 2.9 0.2 Low ON-resistance 3.2 0.1 No secondary breakdown Low-voltage drive 2.6 0.1 Applications 1.2 0.15 1.45 0.15 0.7 0.1 Non-contact relay 0.75 0.1 Solenoid drive 2.54 0.2 Motor drive 5.08 0.4 Control equipment 1 2 3 7 Swit

 8.5. Size:76K  hitachi
 2sk258h.pdf

 8.6. Size:227K  inchange semiconductor
 2sk258.pdf

isc N-Channel MOSFET Transistor 2SK258 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT