2SK1608 Todos los transistores

 

2SK1608 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK1608
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de MOSFET 2SK1608

 

2SK1608 Datasheet (PDF)

 ..1. Size:36K  panasonic
2sk1608.pdf

2SK1608
2SK1608

Power F-MOS FETs 2SK16082SK1608Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)For high-frequency power amplification1.3 0.21.4 0.1+0.20.5 -0.1 Abs

 ..2. Size:207K  inchange semiconductor
2sk1608.pdf

2SK1608
2SK1608

isc N-Channel MOSFET Transistor 2SK1608DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.1. Size:673K  toshiba
2sk1602.pdf

2SK1608
2SK1608

 8.2. Size:673K  toshiba
2sk1600.pdf

2SK1608
2SK1608

2sk160

 8.3. Size:390K  renesas
2sk160a.pdf

2SK1608
2SK1608

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:36K  panasonic
2sk1606.pdf

2SK1608
2SK1608

Power F-MOS FETs 2SK16062SK1606Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2For high-frequency power amplification1.4 0.1+0.20.5 -0.10.8

 8.5. Size:36K  panasonic
2sk1609.pdf

2SK1608
2SK1608

Power F-MOS FETs 2SK16092SK1609Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)For high-frequency power amplification1.3 0.21.4 0.1+0.20.5 -0.1 Abs

 8.6. Size:36K  panasonic
2sk1607.pdf

2SK1608
2SK1608

Power F-MOS FETs2SK1607Silicon N-Channel Power F-MOSUnit : mm Features15.0 0.5 4.5 0.2High avalanche energy capability13.0 0.510.5 0.5 2.0 0.1VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.2 0.1 ApplicationsHigh-speed switching (switching mode regulator)2.0 0.2For high-frequency power amplification1.4 0.31.1 0.15.45

 8.7. Size:36K  panasonic
2sk1605.pdf

2SK1608
2SK1608

Power F-MOS FETs 2SK16052SK1605Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2High avalanche energy capability5.5 0.2 2.7 0.2VGSS : 30V guaranteedLow RDS(on), high-speed switching characteristic3.1 0.1 ApplicationsHigh-speed switching (switching mode regulator)1.3 0.2For high-frequency power amplification1.4 0.1+0.20.5 -0.10.8

 8.8. Size:55K  no
2sk1603.pdf

2SK1608

 8.9. Size:81K  no
2sk1601.pdf

2SK1608
2SK1608

 8.10. Size:207K  inchange semiconductor
2sk1606.pdf

2SK1608
2SK1608

isc N-Channel MOSFET Transistor 2SK1606DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.11. Size:207K  inchange semiconductor
2sk1609.pdf

2SK1608
2SK1608

isc N-Channel MOSFET Transistor 2SK1609DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

 8.12. Size:212K  inchange semiconductor
2sk1603.pdf

2SK1608
2SK1608

isc N-Channel MOSFET Transistor 2SK1603DESCRIPTIONDrain Current I = 2.5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE M

 8.13. Size:212K  inchange semiconductor
2sk1602.pdf

2SK1608
2SK1608

isc N-Channel MOSFET Transistor 2SK1602DESCRIPTIONDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE M

 8.14. Size:214K  inchange semiconductor
2sk1600.pdf

2SK1608
2SK1608

isc N-Channel MOSFET Transistor 2SK1600DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.15. Size:216K  inchange semiconductor
2sk1607.pdf

2SK1608
2SK1608

isc N-Channel MOSFET Transistor 2SK1607DESCRIPTIONDrain Current I =13A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.16. Size:215K  inchange semiconductor
2sk1601.pdf

2SK1608
2SK1608

isc N-Channel MOSFET Transistor 2SK1601DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAX

 8.17. Size:207K  inchange semiconductor
2sk1605.pdf

2SK1608
2SK1608

isc N-Channel MOSFET Transistor 2SK1605DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =450V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXI

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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