2SJ226 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SJ226 Datasheet (PDF)

1.1. 2sj226.pdf Size:84K _sanyo

Ordering number:EN3811 P-Channel Silicon MOSFET 2SJ226 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2085A � Low-voltage drive. [2SJ226] 4.5 � Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 � Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S

5.1. 2sj220l-s.pdf Size:173K _upd



5.2. 2sj228.pdf Size:92K _sanyo

Ordering number:EN3813 P-Channel Silicon MOSFET 2SJ228 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2087A � Low-voltage drive. [2SJ228] 2.5 � Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings

 5.3. 2sj229.pdf Size:86K _sanyo

Ordering number:EN3814 P-Channel Silicon MOSFET 2SJ229 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2085A � Low-voltage drive. [2SJ229] 4.5 � Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 � Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S

5.4. 2sj225.pdf Size:91K _sanyo

Ordering number:EN3810 P-Channel Silicon MOSFET 2SJ225 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2087A � Low-voltage drive. [2SJ225] 2.5 � Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 : Source 2 : Drain 3 : Gate 2.54 2.54 SANYO : NMP Specifications Absolute Maximum Ratings

 5.5. 2sj227.pdf Size:85K _sanyo

Ordering number:EN3812 P-Channel Silicon MOSFET 2SJ227 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2085A � Low-voltage drive. [2SJ227] 4.5 � Its height onboard is 9.5mm. 1.9 2.6 10.5 1.2 1.4 � Meets radial taping. 1.2 0.5 1.6 0.5 1 2 3 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP S

5.6. 2sj221.pdf Size:81K _renesas

2SJ221 Silicon P Channel MOS FET REJ03G0851-0200 (Previous: ADE-208-1185) Rev.2.00 Sep 07, 2005 Description High speed power switching Features � Low on-resistance � High speed switching � Low drive current � 4 V gate drive device ? Can be driven from 5 V source � Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code

5.7. 2sj222.pdf Size:82K _renesas

2SJ222 Silicon P Channel MOS FET REJ03G0852-0200 (Previous: ADE-208-1186) Rev.2.00 Sep 07, 2005 Description High speed power switching Features � Low on-resistance � High speed switching � Low drive current � 4 V gate drive device ? Can be driven from 5 V source � Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code

5.8. rej03g0851 2sj221ds.pdf Size:94K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.9. rej03g0852 2sj222ds.pdf Size:95K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.10. 2sj221.pdf Size:198K _inchange_semiconductor

isc P-Channel MOSFET Transistor 2SJ221 DESCRIPTION ·Low On Resistance ·High Speed Switching ·Low Drive Current ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) -100 V DSS GS V Gate-Source Voltage ±20 V

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