2SK1803 Todos los transistores

 ..1. Size:36K  panasonic
 2sk1803.pdf

Power F-MOS FETs 2SK1803 2SK1803 Silicon N-Channel Power F-MOS Unit mm Features Avalanche energy capability guaranteed EAS > 60mJ 15.0 0.3 5.0 0.2 VGSS= 30V guaranteed 11.0 0.2 3.2 High-speed switching tf= 80ns 3.2 0.1 No secondary breakdown Applications 2.0 0.2 2.0 0.1 Non-contact relay 1.1 0.1 0.6 0.2 Solenoid drive 5.45 0.3 Motor drive 10.9 0

 ..2. Size:216K  inchange semiconductor
 2sk1803.pdf

isc N-Channel MOSFET Transistor 2SK1803 DESCRIPTION Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Contactless relay Diving circuit for a solenoid Driving circuit for a motor Control equipment Switching power supply

 8.1. Size:225K  toshiba
 2sk1805.pdf

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

 8.2. Size:136K  sanyo
 2sk1806.pdf

 8.3. Size:83K  renesas
 2sk1808.pdf

2SK1808 Silicon N Channel MOS FET REJ03G0975-0200 (Previous ADE-208-1322) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D

 8.4. Size:1337K  renesas
 2sk1809.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.5. Size:96K  renesas
 rej03g0975 2sk1808ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:82K  renesas
 2sk1807.pdf

2SK1807 Silicon N Channel MOS FET REJ03G0974-0200 (Previous ADE-208-1321) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D

 8.7. Size:95K  renesas
 rej03g0974 2sk1807ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.8. Size:211K  inchange semiconductor
 2sk1805.pdf

isc N-Channel MOSFET Transistor 2SK1805 DESCRIPTION Drain Current I = 7A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Chopper regulator and motor drive ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0

 8.9. Size:219K  inchange semiconductor
 2sk1809.pdf

isc N-Channel MOSFET Transistor 2SK1809 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Fast Switching Speed Low on-resistance For switchinggregulator,DC-DC Converter Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 8.10. Size:216K  inchange semiconductor
 2sk1807.pdf

isc N-Channel MOSFET Transistor 2SK1807 DESCRIPTION Drain Current I = 4A@ T =25 D C Drain Source Voltage V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Breakdown Voltage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 900 V DS