2SK1806 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1806

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Id|ⓘ - Corriente continua de drenaje: 0.02 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 250 Ohm

Encapsulados: DP3

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2SK1806 datasheet

 ..1. Size:136K  sanyo
2sk1806.pdf pdf_icon

2SK1806

 8.1. Size:225K  toshiba
2sk1805.pdf pdf_icon

2SK1806

www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com

 8.2. Size:83K  renesas
2sk1808.pdf pdf_icon

2SK1806

2SK1808 Silicon N Channel MOS FET REJ03G0975-0200 (Previous ADE-208-1322) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D

 8.3. Size:1337K  renesas
2sk1809.pdf pdf_icon

2SK1806

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

Otros transistores... 2SJ254, 2SJ255, 2SJ256, 2SJ257, 2SJ258, 2SJ259, 2SJ597, 2SK1803, IRF1010E, 2SK1813, 2SK1833, 2SK1834, 2SK1839, 2SK1840, 2SK1841, 2SK1842, 2SK1846