2SK1888 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1888
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 30 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 1100 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
   Paquete / Cubierta: TO220ML

Búsqueda de reemplazo de MOSFET 2SK1888

2SK1888 Datasheet (PDF)

..1. Size:94K sanyo
2sk1888.pdf

Ordering number:EN4204N-Channel Silicon MOSFET2SK1888Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1888] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO :

8.1. Size:96K sanyo
2sk1886.pdf

Ordering number:EN4203N-Channel Silicon MOSFET2SK1886Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1886] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO :

8.2. Size:96K sanyo
2sk1889.pdf

Ordering number:EN4205N-Channel Silicon MOSFET2SK1889Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SK1889] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SK1889-applied equipm

8.3. Size:97K sanyo
2sk1887.pdf

Ordering number:EN4646N-Channel Silicon MOSFET2SK1887Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK1887] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SAN

8.4. Size:85K renesas
2sk1880.pdf

2SK1880(L), 2SK1880(S) Silicon N Channel MOS FET REJ03G0983-0200 (Previous: ADE-208-1331) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching No secondary breakdown Suitable for switching regulator Outline RENESAS Package code: PRSS0004ZD-A RENESAS Package code: PRSS0004ZD-C(Package name: DPAK

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STP21N06L

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