2SJ263 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ263

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm

Encapsulados: TO220ML

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2SJ263 datasheet

 ..1. Size:103K  sanyo
 2sj263.pdf pdf_icon

2SJ263

Ordering number EN4234 P-Channel Silicon MOSFET 2SJ263 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ263] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO

 9.1. Size:101K  sanyo
 2sj264.pdf pdf_icon

2SJ263

Ordering number EN4746 P-Channel Silicon MOSFET 2SJ264 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ264] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO

 9.2. Size:106K  sanyo
 2sj265.pdf pdf_icon

2SJ263

Ordering number EN4235 P-Channel Silicon MOSFET 2SJ265 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ265] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO TO

 9.3. Size:91K  sanyo
 2sj267.pdf pdf_icon

2SJ263

Ordering number EN4747 P-Channel Silicon MOSFET 2SJ267 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ267] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ267- applied equipment. High-density

MOSTRAR MÁS

Otros transistores... 2SK1896, 2SK1897, 2SK1898, 2SK1899, 2SJ591LS, 2SJ594, 2SJ595, 2SJ596, P60NF06, 2SJ264, 2SJ265, 2SJ266, 2SJ267, 2SJ268, 2SJ272, 2SJ273, 2SJ274