2SJ268 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ268
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
   Paquete / Cubierta: SMP

Búsqueda de reemplazo de MOSFET 2SJ268

2SJ268 Datasheet (PDF)

..1. Size:100K sanyo
2sj268.pdf

Ordering number:EN4237P-Channel Silicon MOSFET2SJ268Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ268] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ268-applied equipment

9.1. Size:101K sanyo
2sj264.pdf

Ordering number:EN4746P-Channel Silicon MOSFET2SJ264Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ264] Micaless package facilitating easy mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO

9.2. Size:106K sanyo
2sj265.pdf

Ordering number:EN4235P-Channel Silicon MOSFET2SJ265Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ265] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

9.3. Size:103K sanyo
2sj263.pdf

Ordering number:EN4234P-Channel Silicon MOSFET2SJ263Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ263] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO

9.4. Size:91K sanyo
2sj267.pdf

Ordering number:EN4747P-Channel Silicon MOSFET2SJ267Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2090A Low-voltage drive.[2SJ267] Surface mount type device making the following10.24.51.3possible. Reduction in the assembling time for 2SJ267-applied equipment. High-density

9.5. Size:107K sanyo
2sj266.pdf

Ordering number:EN4236P-Channel Silicon MOSFET2SJ266Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2093A Low-voltage drive.[2SJ266] Surface mount type device making the following4.510.21.3possible. Reduction in the number of manufacturing pro-cesses for 2SJ266-applied equipment

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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