2SJ276 Todos los transistores

 

2SJ276 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ276

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 60 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 27 nS

Conductancia de drenaje-sustrato (Cd): 260 pF

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Empaquetado / Estuche: SMP-FD

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2SJ276 Datasheet (PDF)

1.1. 2sj276.pdf Size:94K _sanyo

2SJ276
2SJ276

Ordering number:EN4749 P-Channel Silicon MOSFET 2SJ276 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SJ276] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the assembling time for 2SJ276- applied equipment. High-density surface m

5.1. 2sj274.pdf Size:93K _sanyo

2SJ276
2SJ276

Ordering number:EN4239 P-Channel Silicon MOSFET 2SJ274 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ274] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.2. 2sj277.pdf Size:97K _sanyo

2SJ276
2SJ276

Ordering number:EN4241 P-Channel Silicon MOSFET 2SJ277 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ277] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ277-applied equipment. Hig

 5.3. 2sj272.pdf Size:92K _sanyo

2SJ276
2SJ276

Ordering number:EN4238 P-Channel Silicon MOSFET 2SJ272 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ272] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220ML

5.4. 2sj275.pdf Size:97K _sanyo

2SJ276
2SJ276

Ordering number:EN4240 P-Channel Silicon MOSFET 2SJ275 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SJ275] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SJ275-applied equipment. Hig

 5.5. 2sj273.pdf Size:90K _sanyo

2SJ276
2SJ276

Ordering number:EN4748 P-Channel Silicon MOSFET 2SJ273 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SJ273] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 : Gate 2.55 2.55 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-2

5.6. rej03g0856 2sj278ds.pdf Size:91K _renesas

2SJ276
2SJ276

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.7. 2sj278.pdf Size:78K _renesas

2SJ276
2SJ276

2SJ278 Silicon P Channel MOS FET REJ03G0856-0200 (Previous: ADE-208-1190) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PLZZ0004CA-A R (Package n

5.8. 2sj279.pdf Size:42K _hitachi

2SJ276
2SJ276

2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai

5.9. 2sj279l-s.pdf Size:43K _hitachi

2SJ276
2SJ276

2SJ279 L , 2SJ279 S Silicon P Channel MOS FET Application DPAK–1 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai

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