2SJ281 Todos los transistores

 

2SJ281 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ281

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 18 nS

Conductancia de drenaje-sustrato (Cd): 100 pF

Resistencia drenaje-fuente RDS(on): 2 Ohm

Empaquetado / Estuche: TP

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2SJ281 Datasheet (PDF)

1.1. 2sj281.pdf Size:93K _sanyo

2SJ281
2SJ281

Ordering number:EN4243A P-Channel Silicon MOSFET 2SJ281 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ281] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ281] 6.5 2.3 5.0 0.5 4 0.5 0.85 1

5.1. 2sj284.pdf Size:81K _sanyo

2SJ281
2SJ281

Ordering number:EN4220 P-Channel Silicon MOSFET 2SJ284 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SJ284] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Con

5.2. 2sj289.pdf Size:41K _sanyo

2SJ281
2SJ281

Ordering number : ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ289] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source Specifications SANYO : PCP Absolute Maximum Ratings at Ta=25C Parameter Sy

 5.3. 2sj288.pdf Size:99K _sanyo

2SJ281
2SJ281

Ordering number:EN4308 P-Channel Silicon MOSFET 2SJ288 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ288] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 : Gate 3.0 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C P

5.4. 2sj285.pdf Size:106K _sanyo

2SJ281
2SJ281

Ordering number:EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SJ285] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Con

 5.5. 2sj287.pdf Size:96K _sanyo

2SJ281
2SJ281

Ordering number:EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit:mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ287] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 : Gate 3.0 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Pa

5.6. 2sj280l-s.pdf Size:121K _hitachi

2SJ281
2SJ281

2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 • Low on–resistance 2 1 3 • High speed switching 2 3 2, 4 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 4. Drain 3 Ta

5.7. 2sj288.pdf Size:1053K _kexin

2SJ281
2SJ281

SMD Type MOSFET P-Channel MOSFET 2SJ288 1.70 0.1 ■ Features ● VDS (V) =-60V ● ID =-0.5 A 0.42 0.1 0.46 0.1 ● RDS(ON) < 3Ω (VGS =-10V) ● RDS(ON) < 4Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±15 Continuous Drain Current ID -0.5 A Puls

5.8. 2sj287.pdf Size:1039K _kexin

2SJ281
2SJ281

SMD Type MOSFET P-Channel MOSFET 2SJ287 1.70 0.1 ■ Features ● VDS (V) =-30V ● ID =-500m A 0.42 0.1 0.46 0.1 ● RDS(ON) < 2.2Ω (VGS =-10V) ● RDS(ON) < 3.3Ω (VGS =-4V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±15 Continuous Drain Current ID -0.5 A

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