2SJ285 Todos los transistores

 

2SJ285 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ285
   Código: BM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 0.25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm
   Paquete / Cubierta: CP

 Búsqueda de reemplazo de MOSFET 2SJ285

 

2SJ285 Datasheet (PDF)

 ..1. Size:106K  sanyo
2sj285.pdf

2SJ285
2SJ285

Ordering number:EN4221P-Channel Silicon MOSFET2SJ285Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SJ285]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Sym

 9.1. Size:81K  sanyo
2sj284.pdf

2SJ285
2SJ285

Ordering number:EN4220P-Channel Silicon MOSFET2SJ284Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2091A Low-voltage drive.[2SJ284]0.40.1630 to 0.11 0.95 20.951.92.91 : Gate2 : Source3 : DrainSANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Sym

 9.2. Size:41K  sanyo
2sj289.pdf

2SJ285
2SJ285

Ordering number : ENN66092SJ289P-Channel Silicon MOSFET2SJ289Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2062A Low-voltage drive.[2SJ289]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.75 2 : Drain3 : SourceSpecificationsSANYO : PCPAbsolute Maximum Ratings at Ta=25CPa

 9.3. Size:93K  sanyo
2sj281.pdf

2SJ285
2SJ285

Ordering number:EN4243AP-Channel Silicon MOSFET2SJ281Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ281]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source2.3 2.3SANYO : TPunit:mm2092B[2SJ281]6.5 2.35.0 0.540.50

 9.4. Size:96K  sanyo
2sj287.pdf

2SJ285
2SJ285

Ordering number:EN4307P-Channel Silicon MOSFET2SJ287Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ287]4.51.51.60.4 0.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 25

 9.5. Size:99K  sanyo
2sj288.pdf

2SJ285
2SJ285

Ordering number:EN4308P-Channel Silicon MOSFET2SJ288Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2062A Low-voltage drive.[2SJ288]4.51.51.60.40.53 2 10.41.51 : Gate3.02 : Drain0.753 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta = 2

 9.6. Size:121K  hitachi
2sj280l-s.pdf

2SJ285
2SJ285

2SJ280 L , 2SJ280 SSilicon P Channel MOS FETApplicationLDPAKHigh speed power switching44Features1 Low onresistance 21 3 High speed switching 232, 4 Low drive current 4 V gate drive device can be driven from15 V source1. Gate Suitable for Switching regulator, DC DC 2. Drainconverter3. Source Avalanche Ratings4. Drain3Ta

 9.7. Size:1039K  kexin
2sj287.pdf

2SJ285
2SJ285

SMD Type MOSFETP-Channel MOSFET2SJ2871.70 0.1 Features VDS (V) =-30V ID =-500m A0.42 0.10.46 0.1 RDS(ON) 2.2 (VGS =-10V) RDS(ON) 3.3 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -30V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5A

 9.8. Size:1053K  kexin
2sj288.pdf

2SJ285
2SJ285

SMD Type MOSFETP-Channel MOSFET2SJ2881.70 0.1 Features VDS (V) =-60V ID =-0.5 A0.42 0.10.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V)1.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5A Puls

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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