2SJ289 Todos los transistores

Ordering number ENN6609 2SJ289 P-Channel Silicon MOSFET 2SJ289 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ289] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Gate 0.75 2 Drain 3 Source Specifications SANYO PCP Absolute Maximum Ratings at Ta=25 C Pa

Ordering number EN4220 P-Channel Silicon MOSFET 2SJ284 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SJ284] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Sym

Ordering number EN4243A P-Channel Silicon MOSFET 2SJ281 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2083B Low-voltage drive. [2SJ281] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 2.3 2.3 SANYO TP unit mm 2092B [2SJ281] 6.5 2.3 5.0 0.5 4 0.5 0

Ordering number EN4307 P-Channel Silicon MOSFET 2SJ287 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ287] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 Gate 3.0 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25

Ordering number EN4308 P-Channel Silicon MOSFET 2SJ288 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2062A Low-voltage drive. [2SJ288] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 1 Gate 3.0 2 Drain 0.75 3 Source SANYO PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 2

Ordering number EN4221 P-Channel Silicon MOSFET 2SJ285 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2091A Low-voltage drive. [2SJ285] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 Gate 2 Source 3 Drain SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Sym

2SJ280 L , 2SJ280 S Silicon P Channel MOS FET Application LDPAK High speed power switching 4 4 Features 1 Low on resistance 2 1 3 High speed switching 2 3 2, 4 Low drive current 4 V gate drive device can be driven from 1 5 V source 1. Gate Suitable for Switching regulator, DC DC 2. Drain converter 3. Source Avalanche Ratings 4. Drain 3 Ta

SMD Type MOSFET P-Channel MOSFET 2SJ287 1.70 0.1 Features VDS (V) =-30V ID =-500m A 0.42 0.1 0.46 0.1 RDS(ON) 2.2 (VGS =-10V) RDS(ON) 3.3 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5 A

SMD Type MOSFET P-Channel MOSFET 2SJ288 1.70 0.1 Features VDS (V) =-60V ID =-0.5 A 0.42 0.1 0.46 0.1 RDS(ON) 3 (VGS =-10V) RDS(ON) 4 (VGS =-4V) 1.Gate 2.Drain 3.Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS 15 Continuous Drain Current ID -0.5 A Puls