2SJ308 Todos los transistores

 

2SJ308 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SJ308
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
   Paquete / Cubierta: TO220ML
 

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2SJ308 Datasheet (PDF)

 ..1. Size:96K  sanyo
2sj308.pdf pdf_icon

2SJ308

Ordering number:EN4318P-Channel Silicon MOSFET2SJ308Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ308] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO-

 9.1. Size:335K  toshiba
2sj305.pdf pdf_icon

2SJ308

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit: mm Analog Applications High input impedance Low gate threshold voltage.: V = -0.5~-1.5 V th Excellent switching times.: t = 0.06 s (typ.) ont = 0.15 s (typ.) off Low drain-source ON resistance: R = 2.4 (typ.) DS (ON) Small packa

 9.2. Size:379K  toshiba
2sj304.pdf pdf_icon

2SJ308

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-m

 9.3. Size:115K  sanyo
2sj307.pdf pdf_icon

2SJ308

Ordering number:EN4317AP-Channel Silicon MOSFET2SJ307Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ307] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : T

Otros transistores... 2SJ276 , 2SJ277 , 2SJ281 , 2SJ284 , 2SJ285 , 2SJ287 , 2SJ288 , 2SJ289 , HY1906P , 2SJ316 , 2SJ320 , 2SJ337 , 2SJ339 , 2SJ340 , 2SJ348 , 2SJ381 , 2SJ382 .

History: 2N7269 | MS65R360F | ME95N03T | GM2302 | AO4800 | AON7518 | IPB77N06S2-12

 

 
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