2SJ308 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ308
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1.5 V
   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
   Paquete / Cubierta: TO220ML

Búsqueda de reemplazo de MOSFET 2SJ308

2SJ308 Datasheet (PDF)

..1. Size:96K sanyo
2sj308.pdf

Ordering number:EN4318P-Channel Silicon MOSFET2SJ308Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ308] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO-

9.1. Size:335K toshiba
2sj305.pdf

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ305 High Speed Switching Applications Unit: mm Analog Applications High input impedance Low gate threshold voltage.: V = -0.5~-1.5 V th Excellent switching times.: t = 0.06 s (typ.) ont = 0.15 s (typ.) off Low drain-source ON resistance: R = 2.4 (typ.) DS (ON) Small packa

9.2. Size:379K toshiba
2sj304.pdf

2SJ304 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L --MOSIV) 2SJ304 DC-DC Converter, Relay Drive and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 80 m (typ.) DS (ON) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : IDSS = -100 A (max) (V = -60 V) DS Enhancement-m

9.3. Size:115K sanyo
2sj307.pdf

Ordering number:EN4317AP-Channel Silicon MOSFET2SJ307Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ307] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : T

9.4. Size:94K sanyo
2sj306.pdf

Ordering number:EN4316P-Channel Silicon MOSFET2SJ306Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SJ306] Micaless package facilitating mounting.4.510.02.83.22.41.61.20.70.751 2 3 1 : Gate2.55 2.552 : Drain3 : Source2.55 2.55SANYO : TO-

9.5. Size:440K nec
2sj302.pdf

9.6. Size:442K nec
2sj302-z.pdf

9.7. Size:435K nec
2sj303.pdf

9.8. Size:1885K kexin
2sj302-zj.pdf

SMD Type MOSFETP-Channel MOSFET2SJ302-ZJ Features VDS (V) =-60V ID =-16 A RDS(ON) 100m (VGS =-10V) RDS(ON) 240m (VGS =-4V) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60V Gate-Source Voltage VGS -20,+10 Continuous Drain Current ID -16A Pulsed Drain Current (Note.1) IDM -64 Power Dissi

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