2SJ337 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ337
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 30 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 18 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 50 nS
Cossⓘ - Capacitancia de salida: 900 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
Paquete / Cubierta: TP
Búsqueda de reemplazo de 2SJ337 MOSFET
2SJ337 Datasheet (PDF)
2sj337.pdf

Ordering number:EN4669P-Channel Silicon MOSFET2SJ337Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON resistance.unit:mm Ultrahigh-speed switching.2083B Low-voltage drive.[2SJ337]6.52.35.00.540.850.71.21 : Gate0.60.52 : Drain1 2 33 : Source4 : Drain2.3 2.3SANYO : TPunit:mm2092B[2SJ337]6.5 2.35.0 0.5
2sj337.pdf

2SJ337www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.033 at VGS = - 10 V - 26 100 % Rg TestedRoHS- 30 19 nCCOMPLIANT 100 % UIS Tested0.046 at VGS = - 4.5 V - 21APPLICATIONS Load Switch Notebook Adaptor SwitchSTO-252GG D SDTop ViewP-Chan
2sj338.pdf

2SJ338 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ338 Audio Frequency Power Amplifier Application Unit: mm High breakdown voltage : VDSS = -180 V High forward transfer admittance : |Y | = 0.7 S (typ.) fs Complementary to 2SK2162 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitDrain-source voltage VDSS -180 VGate-source voltage VGSS
2sj334.pdf

2SJ334 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2--MOSV) 2SJ334 DC-DC Converter, Relay Drive and Motor Drive Unit: mmApplications 4-V gate drive Low drain-source ON-resistance : RDS (ON) = 29 m (typ.) High forward transfer admittance : |Yfs| = 23 S (typ.) Low leakage current : IDSS = -100 A (max) (VDS = -60 V) Enhancement mode : Vth = -0
Otros transistores... 2SJ284 , 2SJ285 , 2SJ287 , 2SJ288 , 2SJ289 , 2SJ308 , 2SJ316 , 2SJ320 , 5N50 , 2SJ339 , 2SJ340 , 2SJ348 , 2SJ381 , 2SJ382 , 2SJ383 , 2SK1900 , 2SK1905 .
History: STD7ANM60N | AP4411GM | AP4511GM | STP30NS15LFP | AP18N20GS | AM3443P | 10N60G-TQ2-R
History: STD7ANM60N | AP4411GM | AP4511GM | STP30NS15LFP | AP18N20GS | AM3443P | 10N60G-TQ2-R



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
irf540z | ss8550 transistor | irfp240 mosfet | tip141 | 2n404 | 2n4250 | d882 transistor equivalent | 17n80c3