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 ..1. Size:39K  sanyo
 2sj348.pdf

Ordering number ENN6421 P-Channel Silicon MOSFET 2SJ348 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2052C 4V drive. [2SJ348] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Gate 1 2 3 2 Drain 3 Source 2.55 2.55 SANYO TO-220 Specifications Absolute Maximum Ratings at Ta = 25 C Paramete

 9.1. Size:307K  toshiba
 2sj346.pdf

2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Unit mm Analog Switch Applications Low threshold voltage Vth = -0.5 -1.5 V High speed Small package Complementary to 2SK1829 Marking Equivalent Circuit Maximum Ratings (Ta = = 25 C) = = JEDEC Characteristics Symbol Rating Unit JEITA SC-7

 9.2. Size:310K  toshiba
 2sj342.pdf

2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Unit mm Analog Switch Applications Low threshold voltage Vth = -0.8 -2.5 V High speed Enhancement-mode Small package Complementary to 2SK1825 Equivalent Circuit Maximum Ratings (Ta = = 25 C) = = JEDEC Characteristics Symbol Rating

 9.3. Size:333K  toshiba
 2sj345.pdf

2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Unit mm Analog Switch Applications Low threshold voltage Vth = -0.5 -1.5 V High speed Small package Complementary to 2SK1828 Marking Equivalent Circuit Maximum Ratings (Ta = = 25 C) = = JEDEC TO-236MOD JEITA SC-59 Characteristics Symbol Ratin

 9.4. Size:300K  toshiba
 2sj347.pdf

2SJ347 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ347 High Speed Switching Applications Unit mm Analog Switch Applications Low threshold voltage Vth = -0.5 -1.5 V High speed Small package Complementary to 2SK1830 Marking Equivalent Circuit Maximum Ratings (Ta = = 25 C) = = JEDEC Characteristics Symbol Rating Unit JEITA

 9.5. Size:401K  toshiba
 2sj349.pdf

2SJ349 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2- -MOSV) 2SJ349 DC-DC Converter, Relay Drive and Motor Drive Unit mm Applications 4-V gate drive Low drain-source ON-resistance RDS (ON) = 33 m (typ.) High forward transfer admittance Yfs = 20 S (typ.) Low leakage current IDSS = -100 A (max) (VDS = -60 V) Enhancement mode Vth = -0.

 9.6. Size:310K  toshiba
 2sj344.pdf

2SJ344 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ344 High Speed Switching Applications Unit mm Analog Switch Applications Low threshold voltage Vth = -0.8 -2.5 V High speed Enhancement-mode Small package Complementary to 2SK1827 Marking Equivalent Circuit JEDEC Maximum Ratings (Ta = = 25 C) = = JEITA SC-70 Characteri

 9.7. Size:337K  toshiba
 2sj343.pdf

2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Unit mm Analog Switch Applications Low threshold voltage Vth = -0.8 -2.5 V High speed Enhancement-mode Small package Complementary to 2SK1826 Marking Equivalent Circuit Maximum Ratings (Ta = JEDEC TO-236MOD = 25 C) = = JEITA SC-59 Charac

 9.8. Size:42K  sanyo
 2sj340.pdf

Ordering number ENN6420 P-Channel Silicon MOSFET 2SJ340 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2093A 4V drive. [2SJ340] Enables simplified fabrication, high-density mount- 4.5 10.2 1.3 ing, and miniaturization in end products due to the surface mountable package. 1.2 0.8 0.4 1 2