2SJ381 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2SJ381 Datasheet (PDF)

1.1. 2sj381.pdf Size:106K _sanyo

Ordering number:EN5296A P-Channel Silicon MOSFET 2SJ381 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON-resistance. unit:mm � Ultrahigh-speed switching. 2062A � 2.5V drive. [2SJ381] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

5.1. 2sj389l-s.pdf Size:48K _upd

2SJ389 L , 2SJ389 S Silicon P Channel MOS FET Application DPAK–2 4 High speed power switching 4 Features 1 2 3 • Low on–resistance 2, 4 • High speed switching 1 2 3 • Low drive current • 4 V gate drive device can be driven from 1 5 V source 1. Gate • Suitable for Switching regulator, DC – DC 2. Drain converter 3. Source • Avalanche Ratings 3 4. Drai

5.2. 2sj380.pdf Size:224K _update-mosfet

isc P-Channel MOSFET Transistor 2SJ380 DESCRIPTION ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching application ·Switching regulator ,DC-DC converter and Motor drive application ABSOLUTE MAXIMUM RATINGS(

 5.3. 2sj380.pdf Size:320K _toshiba



5.4. 2sj383.pdf Size:110K _sanyo

Ordering number:EN5297A P-Channel Silicon MOSFET 2SJ383 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2083B � 2.5V drive. [2SJ383] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ383] 6.5 2.3 5.0 0.5 4 0.5 0.8

 5.5. 2sj382.pdf Size:96K _sanyo

Ordering number:EN5057 P-Channel Silicon MOSFET 2SJ382 Ultrahigh-Speed Switching Applications Features Package Dimensions � Low ON resistance. unit:mm � Ultrahigh-speed switching. 2083B � 2.5V drive. [2SJ382] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 : Gate 0.6 0.5 2 : Drain 1 2 3 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit:mm 2092B [2SJ382] 6.5 2.3 5.0 0.5 4 0.5 0.85

5.6. rej03g0862 2sj387lsds.pdf Size:101K _renesas

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.7. 2sj387.pdf Size:88K _renesas

2SJ387(L), 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous: ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features � Low on-resistance � Low drive current � 2.5 V Gate drive device can be driven from 3 V Source � Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: P

5.8. 2sj389s.pdf Size:248K _inchange_semiconductor

isc P-Channel MOSFET Transistor 2SJ389S ·FEATURES ·Static drain-source on-resistance: RDS(on)≤135mΩ(@V = -10V; I = -5A) GS D ·High speed switching ·Low drive current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·High speed power switching ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER

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