2SK1905 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1905

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.135 Ohm

Encapsulados: TO220ML

 Búsqueda de reemplazo de 2SK1905 MOSFET

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2SK1905 datasheet

 ..1. Size:92K  sanyo
2sk1905.pdf pdf_icon

2SK1905

Ordering number EN4649 N-Channel Silicon MOSFET 2SK1905 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1905] Micaless package facilitating easy mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANY

 8.1. Size:99K  sanyo
2sk1900.pdf pdf_icon

2SK1905

Ordering number EN4210 N-Channel Silicon MOSFET 2SK1900 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2093A Low-voltage drive. [2SK1900] Surface mount type device making the following 4.5 10.2 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1900-applied equipm

 8.2. Size:94K  sanyo
2sk1908.pdf pdf_icon

2SK1905

Ordering number EN4650 N-Channel Silicon MOSFET 2SK1908 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2090A Low-voltage drive. [2SK1908] Surface mount type device making the following 10.2 4.5 1.3 possible. Reduction in the number of manufacturing pro- cesses for 2SK1908-applied equipm

 8.3. Size:95K  sanyo
2sk1906.pdf pdf_icon

2SK1905

Ordering number EN4225 N-Channel Silicon MOSFET 2SK1906 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2063A Low-voltage drive. [2SK1906] Micaless package facilitating mounting. 4.5 10.0 2.8 3.2 2.4 1.6 1.2 0.7 0.75 1 2 3 1 Gate 2.55 2.55 2 Drain 3 Source 2.55 2.55 SANYO T

Otros transistores... 2SJ337, 2SJ339, 2SJ340, 2SJ348, 2SJ381, 2SJ382, 2SJ383, 2SK1900, IRF540N, 2SK1906, 2SK1907, 2SK1908, 2SK1909, 2SK1961, 2SK1967, 2SK198, 2SK1980