2SK2342 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK2342

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 10 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 15 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: SC63

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2SK2342 datasheet

 ..1. Size:24K  panasonic
 2sk2342.pdf pdf_icon

2SK2342

Power F-MOS FETs 2SK2342 2SK2342 Silicon N-Channel MOS Unit mm For motor drive 6.5 0.1 For DC-DC converter 5.3 0.1 4.35 0.1 3.0 0.1 Features Low ON-resistance RDS(on) High-speed switching 1.0 0.1 0.85 0.1 0.75 0.1 0.5 0.1 4.6 0.1 0.05 to 0.15 Absolute Maximum Ratings (Tc = 25 C) Parameter Symbol Rating Unit 1 Gate 1 2 3 2 Drain Drain-Source breakd

 8.1. Size:73K  1
 2sk2341.pdf pdf_icon

2SK2342

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2341 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SK2341 is N-channel Power MOS Field Effect Transis- (in millimeters) tor designed for high voltage switching applications. 10.0 0.3 4.5 0.2 3.2 0.2 FEATURES 2.7 0.2 Low On-state Resistance RDS(on) = 0.26 MAX. (VGS = 10 V, ID =

 8.2. Size:55K  sanyo
 2sk2348.pdf pdf_icon

2SK2342

Ordering number EN5415A N-Channel Silicon MOSFET 2SK2348 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2348] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

 8.3. Size:54K  sanyo
 2sk2349.pdf pdf_icon

2SK2342

Ordering number EN5315A N-Channel Silicon MOSFET 2SK2349 High-Voltage, High-Speed Switching Applications Features Package Dimensions Low ON resistance, ultrahigh-speed switching. unit mm High reliability (Adoption of HVP process). 2131-TO-3JML [2SK2349] 1 Gate 2 Drain 3 Source SANYO TO-3JML Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol

MOSTRAR MÁS

Otros transistores... 2SK1961, 2SK1967, 2SK198, 2SK1980, 2SK2326, 2SK2327, 2SK2339, 2SK2340, IRF3710, 2SK2347, 2SK2348, 2SK2349, 2SK2374, 2SK2375, 2SK2377, 2SK2378, 2SK2379