2SK2374 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2374
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 60 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
   Paquete / Cubierta: TOP3E

Búsqueda de reemplazo de MOSFET 2SK2374

2SK2374 Datasheet (PDF)

..1. Size:32K panasonic
2sk2374.pdf

Power F-MOS FETs 2SK23742SK2374Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen

8.1. Size:425K toshiba
2sk2376.pdf

2SK2376 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2--MOSV) 2SK2376 Unit: mmChopper Regulator, DC-DC Converter and Motor Drive Applications 4-V gate drive Low drain-source ON resistance : RDS (ON) = 13 m (typ.) High forward transfer admittance : |Yfs| = 40 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 60 V) Enhancement mode : Vt

8.2. Size:26K sanyo
2sk2378.pdf

Ordering number : ENN5412B2SK2378N-channel Silicon MOSFET2SK2378Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2378] Micaless package facilitaing mounting. 4.510.02.83.22.41.61.20.70.751 2 31 : Gate2.55 2.552 : Drain3 : SourceSpeci

8.3. Size:28K sanyo
2sk2379.pdf

Ordering number : ENN5374A2SK2379N-Channel Silicon MOSFET2SK2379Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistance.unit : mm Ultrahigh-speed switching.2063A Low-voltage drive.[2SK2379]4.5 Micalless package facilitaing mounting.10.02.83.22.41.61.20.70.751 : Gate1 2 32 : Drain2.55 2.553 : SourceSpe

8.4. Size:375K renesas
2sk2371 2sk2372.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.5. Size:86K nec
2sk2369 2sk2370.pdf

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2369/2SK2370SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThe 2SK2369/2SK2370 is N-Channel MOS Field Effect Transis-(in millimeters)tor designed for high voltage switching applications. 3.0 0.2FEATURES4.7 MAX.15.7 MAX1.5 Low On-Resistance2SK2369: RDS(on) = 0.35 (VGS = 10 V, ID = 1

8.6. Size:31K panasonic
2sk2377.pdf

Power F-MOS FETs 2SK23772SK2377Silicon N-Channel Power F-MOSUnit : mm Features10.0 0.2 4.2 0.2Avalanche energy capability guaranteed5.5 0.2 2.7 0.2High-speed switchingLow ON-resistance3.1 0.1No secondary breakdownLow-voltage drive Applications1.3 0.2 1.4 0.1Non-contact relaySolenoid drive+0.20.5 -0.10.8 0.1Motor driveControl equipmen

8.7. Size:36K panasonic
2sk2375.pdf

Power F-MOS FETs 2SK23752SK2375Silicon N-Channel Power F-MOSUnit : mm FeaturesAvalanche energy capability guaranteed15.5 0.5 3.0 0.33.2 0.1High-speed switching5 5Low ON-resistanceNo secondary breakdown554.0 Applications52.0 0.21.1 0.1Non-contact relay0.7 0.1Solenoid drive5.45 0.3 5.45 0.3Motor drive5Control equipmen

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