2SJ499 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SJ499
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 30 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Voltaje de corte de la puerta |Vgs(off)|: 1 V
Carga de la puerta (Qg): 45 nC
Tiempo de subida (tr): 80 nS
Conductancia de drenaje-sustrato (Cd): 800 pF
Resistencia entre drenaje y fuente RDS(on): 0.045 Ohm
Paquete / Cubierta: TP
Búsqueda de reemplazo de MOSFET 2SJ499
2SJ499 Datasheet (PDF)
2sj499.pdf
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Ordering number : ENN65892SJ499P-Channel Silicon MOSFET2SJ499Load Switching ApplicationsFeatures Package Dimensions Low ON-state resistance. unit : mm 4V drive. 2083B[2SJ499]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3SANYO : TPunit : mm2092B[2SJ499]6.5 2.35.0 0.540.50.851 2 30.6 1 : Gat
2sj496.pdf
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2SJ496 Silicon P Channel MOS FET REJ03G0870-0300 (Previous: ADE-208-482A) Rev.3.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D
2sj495.pdf
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
r07ds0433ej 2sj496.pdf
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Preliminary Datasheet R07DS0433EJ04002SJ496 (Previous: REJ03G0870-0300)Rev.4.00Silicon P Channel MOS FET Jun 07, 2011Description High speed power switching Features Low on-resistance RDS (on) = 0.12 typ. (at VGS = 10 V, ID = 2.5 A) 4 V gate drive devices. Large current capacitance ID = 5 A Outline RENESAS Package code: PRSS0003DC-A(Pack
2sj493.pdf
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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ493SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SJ493 Isolated TO-220FEATURES Super low on-state resistanceRDS(on)1 = 100 m (MAX.) (VGS = 10 V, ID = 8 A)RDS(on)2
2sj495.pdf
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DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ495SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEDESCRIPTION PACKAGE DIMENSIONSThis product is P-Channel MOS Field Effect Transistor (in millimeter)designed for high current switching applications.10.0 0.3 4.5 0.23.2 0.22.7 0.2FEATURES Super Low On-State ResistanceRDS(on)1 = 30 m MAX. (VGS = 10 V, ID =
2sj492 2sj492-s 2sj492-zj.pdf
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DATA SHEETMOS FIELD EFFECT TRANSISTOR2SJ492SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is P-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for DC/DC converters and motor/lamp driver2SJ492 TO-220ABcircuits.2SJ492-S TO-2622SJ492-ZJ TO-263FEATURES Low on-state resistanceRDS(on)1 = 100 m (MAX.) (VG
2sj494.pdf
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DATA SHEETMOS FIELD EFFECT POWER TRANSISTORS2SJ494SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEPACKAGE DIMENSIONSDESCRIPTION(in millimeter)This product is P-Channel MOS Field Effect Transistordesigned for high current switching applications.4.50.210.00.33.20.22.70.2FEATURES Super Low On-State ResistanceRDS(on)1 = 50 m Max. (VGS = 10 V, ID = 1
2sj48 2sj49 2sj50.pdf
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
2sj498.pdf
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ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble
2sj492-zj.pdf
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SMD Type MOSFETP-Channel MOSFET2SJ492-ZJ Features VDS (V) =-60V ID =-20 A RDS(ON) 100m (VGS =-10V) RDS(ON) 185m (VGS =-4V) Low Ciss: Ciss = 1210 pF (TYP.)DrainBodyGate DiodeGateProtectionSourceDiode Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS -60VVGS(AC) 20 Gate-Sourc
2sj492.pdf
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SMD Type MOSFETMOS Field Effect Transistor2SJ492TO-263Unit: mmFeatures+0.24.57-0.2+0.11.27-0.1Low on-state resistanceRDS(on)1 = 100 m (MAX.) (VGS =-10V, ID =-10A)RDS(on)2 = 185 m (MAX.) (VGS =-4 V, ID =-10 A)+0.1Low Ciss: Ciss = 1210 pF (TYP.) 0.1max1.27-0.1Built-in gate protection diode+0.10.81-0.12.541Gate+0.22.54-0.2 +0.1 +0.25.08-0.1 0.4-0.22D
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .