2SJ560 Todos los transistores

 

2SJ560 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SJ560

Código: JL

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 10 V

Corriente continua de drenaje (Id): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 0.6 Ohm

Empaquetado / Estuche: PCP

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2SJ560 Datasheet (PDF)

1.1. 2sj560.pdf Size:184K _sanyo

2SJ560
2SJ560

Ordering number:ENN6120A P-Channel Silicon MOSFET 2SJ560 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2157 2.5V drive. [2SJ560] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 2 : Drain 0.75 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramete

5.1. 2sj567.pdf Size:361K _toshiba

2SJ560
2SJ560

2SJ567 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (?-MOSV) 2SJ567 Industrial Applications Switching Applications Unit: mm Chopper Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 1.6 ? (typ.) • High forward transfer admittance: |Y | = 2.0 S (typ.) fs • Low leakage current: I = -100 µA (max) (V = -20

5.2. 2sj563.pdf Size:140K _sanyo

2SJ560
2SJ560

Ordering number:ENN6097A P-Channel Silicon MOSFET 2SJ563 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ563] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter

 5.3. 2sj561.pdf Size:159K _sanyo

2SJ560
2SJ560

Ordering number:ENN6095A P-Channel Silicon MOSFET 2SJ561 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2062A 4V drive. [2SJ561] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter

5.4. 2sj569ls.pdf Size:29K _sanyo

2SJ560
2SJ560

Ordering number : ENN6898 2SJ569LS P-Channel Silicon MOSFET 2SJ569LS Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2078B [2SJ569] 4.5 10.0 2.8 3.2 0.9 1.2 0.7 0.75 1 : Gate 1 2 3 2 : Drain 3 : Source 2.55 2.55 SANYO : TO-220FI-LS Specifications Absolute Maximum Ratings at Ta=25C Parameter

 5.5. 2sj562.pdf Size:147K _sanyo

2SJ560
2SJ560

Ordering number:ENN6096A P-Channel Silicon MOSFET 2SJ562 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit:mm Ultrahigh-speed switching. 2062A 2.5V drive. [2SJ562] 4.5 1.5 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 : Gate 0.75 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Paramet

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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